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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4502

Title: Diameter dependence of current-voltage characteristics of ultrasmall area AlSb-InAs resonant tunneling diodes with diameters down to 20nm
Authors: Nomoto, K.
Taira, K.
Suzuki, T.
Hase, I.
Hiroshima, H.
Komuro, M.
Issue Date: 1997-04-14
Publisher: American Institute of Physics
Magazine name: Applied Physics Letters
Volume: 70
Number: 15
Start page: 2025
End page: 2027
DOI: 10.1063/1.118772
Abstract: We have studied the current-voltage characteristics I(V) of ultrasmall area AlSb-InAs resonant tunneling diodes (RTDs) with diameters down to 20 nm. Resonant tunneling peaks were observed for all the diodes at room temperature. The peak-to-valley ratio reduces with the decreasing diameter of the RTD. We found from the diameter dependence of the valley current that the reduction is due to a contribution of the thermally activated surface current to the valley current. For RTDs with diameters less than 100 nm, we observed fine structures around zero bias at 4 K. They can be attributed to tunneling through zero-dimensional states confined by a RTD sidewall.
Rights: Copyright 1997 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in K.Nomoto, K.Taira, T.Suzuki, I.Hase, H.Hiroshima, and K.Komuro, Applied Physics Letters, 70(15), 2025-2027 (1997) and may be found at http://link.aip.org/link/?APPLAB/70/2025/1
URI: http://hdl.handle.net/10119/4502
Material Type: publisher
Appears in Collections:g10-1. 雑誌掲載論文 (Journal Articles)

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