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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/4504
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| タイトル: | Experimental evidence of surface conduction in AlSb-InAs tunneling diodes |
| 著者: | Nomoto, K.
Taira, K.
Suzuki, T.
Hase, I. |
| 発行日: | 1999-01-15 |
| 出版者: | American Institute of Physics |
| 誌名: | Journal of Applied Physics |
| 巻: | 85 |
| 号: | 2 |
| 開始ページ: | 953 |
| 終了ページ: | 958 |
| DOI: | 10.1063/1.369216 |
| 抄録: | The peak-to-valley ratio of AlSb–InAs resonant tunneling diodes decreases as the diameter of the diode decreases due to the surface current. To clarify the origin of the surface current, we studied AlSb–InAs single-barrier diodes with various diameters and barrier thicknesses at various temperatures. We conclude from experimentally obtained results that bulk current is caused by tunneling through an AlSb barrier influenced by the band structure and surface current is caused by an electron emission from band-gap surface states at the AlSb barrier based on the Poole-Frenkel mechanism with ionization energy of 0.24 eV. |
| Rights: | Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in K.Nomoto, K.Taira, T.Suzuki, and I.Hase, Journal of Applied Physics, 85(2), 953-958 (1999) and may be found at http://link.aip.org/link/?JAPIAU/85/953/1 |
| URI: | http://hdl.handle.net/10119/4504 |
| 資料タイプ: | publisher |
| 出現コレクション: | g10-1. 雑誌掲載論文 (Journal Articles)
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