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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4504

Title: Experimental evidence of surface conduction in AlSb-InAs tunneling diodes
Authors: Nomoto, K.
Taira, K.
Suzuki, T.
Hase, I.
Issue Date: 1999-01-15
Publisher: American Institute of Physics
Magazine name: Journal of Applied Physics
Volume: 85
Number: 2
Start page: 953
End page: 958
DOI: 10.1063/1.369216
Abstract: The peak-to-valley ratio of AlSb–InAs resonant tunneling diodes decreases as the diameter of the diode decreases due to the surface current. To clarify the origin of the surface current, we studied AlSb–InAs single-barrier diodes with various diameters and barrier thicknesses at various temperatures. We conclude from experimentally obtained results that bulk current is caused by tunneling through an AlSb barrier influenced by the band structure and surface current is caused by an electron emission from band-gap surface states at the AlSb barrier based on the Poole-Frenkel mechanism with ionization energy of 0.24 eV.
Rights: Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in K.Nomoto, K.Taira, T.Suzuki, and I.Hase, Journal of Applied Physics, 85(2), 953-958 (1999) and may be found at http://link.aip.org/link/?JAPIAU/85/953/1
URI: http://hdl.handle.net/10119/4504
Material Type: publisher
Appears in Collections:g10-1. 雑誌掲載論文 (Journal Articles)

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