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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4505

Title: Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In_<0.75>Ga_<0.25>As/In_<0.75>Al_<0.25>As heterojunctions
Authors: Sato, Y.
Kita, T.
Gozu, S.
Yamada, S.
Issue Date: 2001-06-15
Publisher: American Institute of Physics
Magazine name: Journal of Applied Physics
Volume: 89
Number: 12
Start page: 8017
End page: 8021
DOI: 10.1063/1.1362356
Abstract: Amounts of spontaneous spin splittings were estimated from low-temperature magnetoresistances in two-dimensional electron gases created at In_<0.75>Ga_<0.25>As/In_<0.75>Al_<0.25>As heterojunctions under a gate bias. Typical sheet electron densities and mobilities in the raw wafers were ~1.0×10^<12>/cm^2 and 2-5×10^5 cm^2/V s at 1.5 K, respectively. A maximum spin-orbit coupling constant α_<zero> of ~30(×10^<-12> eV m) was obtained for the van der Pauw sample. In gated Hall-bar samples, a decrease in the α_<zero> value with decreasing gate voltage (V_g) was first confirmed in a normal heterojunction. The main origin for such a large α_<zero>, which is a few times larger than any previously reported, was found to be a structure-dependent so-called interface contribution in the Rashba term.
Rights: Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Sato, T. Kita, S. Gozu and S. Yamada, Journal of Applied Physics, 89(12), 8017-8021 (2001) and may be found at http://link.aip.org/link/?JAPIAU/89/8017/1
URI: http://hdl.handle.net/10119/4505
Material Type: publisher
Appears in Collections:g10-1. 雑誌掲載論文 (Journal Articles)

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