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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4507

Title: Fabrication of ambipolar field-effect transistor device with heterostructure of C_<60> and pentacene
Authors: Kuwahara, Eiji
Kubozono, Yoshihiro
Hosokawa, Tomoko
Nagano, Takayuki
Masunari, Kosuke
Fujiwara, Akihiko
Issue Date: 2004-11-15
Publisher: American Institute of Physics
Magazine name: Applied Physics Letters
Volume: 85
Number: 20
Start page: 4765
End page: 4767
DOI: 10.1063/1.1818336
Abstract: Ambipolar field-effect transistor (FET) device was fabricated with heterostructure of thin films of C_<60> and pentacene. Three types of device structures in the C_<60>/pentacene heterostructure FET device were studied in order to realize the best ambipolar properties. In the middle-contact type FET device of C_<60> and pentacene, the mobility μ in p-channel operation was estimated to be 6.8×10^<-2> cm^2 V^<-1> s^<-1>, while the μ in n-channel operation was 1.3×10^<-3> cm^2 V^<-1> s^<-1>. This ambipolar FET device is available for a practical building-block to form CMOS integrated circuits with low-power consumption, good-noise margins, and ease of design.
Rights: Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in E. Kuwahara, Y. Kubozono, T. Hosokawa, T. Nagano, K. Masunari and A. Fujiwara, Applied Physics Letters, 85(20), 4765-4767 (2004) and may be found at http://link.aip.org/link/?APPLAB/85/4765/1
URI: http://hdl.handle.net/10119/4507
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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