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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4516

Title: Effect of nitridation on the growth of GaN on ZrB_2(0001)/Si(111) by molecular beam epitaxy
Authors: Wang, Zhi-Tao
Yamada-Takamura, Y.
Fujikawa, Y.
Sakurai, T.
Xue, Q. K.
Issue Date: 2006-08-02
Publisher: American Institute of Physics
Magazine name: Journal of Applied Physics
Volume: 100
Number: 3
Start page: 033506-1
End page: 033506-5
DOI: 10.1063/1.2218763
Abstract: The effect of nitridation on the epitaxial growth of GaN on lattice-matched ZrB_2(0001) films prepared ex situ and in situ was studied using an ultrahigh-vacuum molecular-beam epitaxy (MBE)-scanning probe microscopy system. The growth of GaN was carried out by rf-plasma-assisted MBE, and epitaxy of wurtzite GaN was observed on both ex situ and in situ prepared ZrB_2 samples. The polarity was found to be consistently N-polar regardless of the samples, based on the observation of a series of N-polar Ga-rich reconstructions: (3×3), (6×6), and c(6×12). The nitridation of ZrB_2 film was conducted by exposing it to active nitrogen and well-ordered hexagonal-BN (h-BN) formation was observed when the annealing temperature was above 900 °C. The partially formed BN layer affected neither the epitaxy nor the polarity of GaN, but when the surface was fully covered with well-ordered h-BN, GaN growth did not occur.
Rights: Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Zhi-Tao Wang, Y. Yamada-Takamura, Y. Fujikawa, T. Sakurai, Q. K. Xue, J. Tolle, J. Kouvetakis, and I. S. T. Tsong, Journal of Applied Physics, 100(3), 033506 (2006) and may be found at http://link.aip.org/link/?JAPIAU/100/033506/1
URI: http://hdl.handle.net/10119/4516
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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