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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4526

Title: A metal/insulator tunnel transistor with 16 nm channel length
Authors: Sasajima, Ryouta
Fujimaru, Kouji
Matsumura, Hideki
Issue Date: 1999-05-24
Publisher: American Institute of Physics
Magazine name: Applied Physics Letters
Volume: 74
Number: 21
Start page: 3215
End page: 3217
DOI: 10.1063/1.124109
Abstract: A nanometer transistor, metal/insulator tunnel transistor (MITT), which consists of only metal and insulator is experimentally studied. In the MITT, the Fowler-Nordheim tunneling currents through an insulator in lateral metal/insulator/metal structure are controlled by changing a voltage at a gate electrode upon the middle insulator, due to variation of tunnel-barrier thickness at the insulator. It is demonstrated that the MITT with 16 nm channel length fabricated by conventional photolithography can operate similarly to the conventional metal/oxide/semiconductor field-effect transistor with on/off ratio of current larger than 105. The result indicates that the MITT is a promising candidate for future switching transistors in ultralarge scale integrated circuits.
Rights: Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Ryouta Sasajima, Kouji Fujimaru, Hideki Matsumura, Applied Physics Letters, 74(21), 3215-3217 (1999) and may be found at http://link.aip.org/link/?APPLAB/74/3215/1
URI: http://hdl.handle.net/10119/4526
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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