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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4527

Title: Atomistic study of GaN surface grown on Si(111)
Authors: Wang, Z. T.
Yamada-Takamura, Y.
Fujikawa, Y.
Sakurai, T.
Xue, Q. K.
Issue Date: 2005-07-18
Publisher: American Institute of Physics
Magazine name: Applied Physics Letters
Volume: 87
Number: 3
Start page: 032110-1
End page: 032110-3
DOI: 10.1063/1.2000332
Abstract: GaN is directly grown on Si(111) by radio-frequency plasma-assisted molecular-beam epitaxy, and the surface is studied using in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). By optimizing the growth condition, well-defined surface reconstructions are observed in atomically-resolved STM images after the additional Ga deposition, indicating the uniform N-polarity of the grown film. We show that N-rich condition in the initial GaN growth and slightly Ga-rich condition in the subsequent growth are critical in order to achieve monopolar uniform GaN films.
Rights: Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Z. T. Wang, Y. Yamada-Takamura, Y. Fujikawa, T. Sakurai, and Q. K. Xue, Applied Physics Letters, 87(3), 032110 (2005) and may be found at http://link.aip.org/link/?APPLAB/87/032110/1
URI: http://hdl.handle.net/10119/4527
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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