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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4538

Title: Electrical properties of nearly stoichiometric GaAs grown by molecular beam epitaxy at low temperature
Authors: Fukushima, S.
Obata, T.
Otsuka, N.
Issue Date: 2001-01-01
Publisher: American Institute of Physics
Magazine name: Journal of Applied Physics
Volume: 89
Number: 1
Start page: 380
End page: 385
DOI: 10.1063/1.1330765
Abstract: Nearly stoichiometeric GaAs epilayers doped with Si or Be were grown by molecular beam epitaxy at a low temperature with closely controlled fluxes near the stoichiometric conditions. Excess As point defects in the epilayers which acted as trap sites of free carriers were studied by means of the Hall effect measurements. Under the same As/Ga flux condition, concentrations of excess As point defects which trap free carriers increase with increase of concentrations of Si or Be. With the same concentration of the dopants, on the other hand, concentrations of excess As point defects increase linearly with the As/Ga flux ratio. The dependence of carrier mobility on the trapped carrier concentrations indicates that free carriers are trapped by neutral point defects and change them into ionized ones. In the epilayers which are very close to the stoichiometric composition, Si exhibits its amphoteric nature, occupying both donor and acceptor sites and results in the self-compensation.
Rights: Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in S. Fukushima, T. Obata, and N. Otsuka, Journal of Applied Physics, 89(1), 380-385 (2001) and may be found at http://link.aip.org/link/?JAPIAU/89/380/1
URI: http://hdl.handle.net/10119/4538
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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