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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/4542
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| タイトル: | Nanoscale metal transistor control of Fowler-Nordheim tunneling currents through 16 nm insulating channel |
| 著者: | Fujimaru, Kouji
Sasajima, Ryouta
Matsumura, Hideki |
| 発行日: | 1999-05-01 |
| 出版者: | American Institute of Physics |
| 誌名: | Journal of Applied Physics |
| 巻: | 85 |
| 号: | 9 |
| 開始ページ: | 6912 |
| 終了ページ: | 6916 |
| DOI: | 10.1063/1.370104 |
| 抄録: | A nanoscale metal/insulator tunnel transistor (MITT) with a channel length of only 16 nm is fabricated by conventional photolithography, and its operation is experimentally studied. The MITT consists of two metal electrodes, an insulating channel inserted laterally between these two electrodes, and a third metal gate electrode formed upon the gate insulator above the insulating channel. The Fowler-Nordheim tunneling currents flowing from one metal electrode to the other through the insulating channel are controlled by applying a voltage to the gate electrode. It is found that the MITT can be operated similarly to the semiconductor transistor, and the feasibility of the nanoscale metal transistor is demonstrated. |
| Rights: | Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Kouji Fujimaru, Ryouta Sasajima, Hideki Matsumura, Journal of Applied Physics, 85(9), 6912-6916 (1999) and may be found at http://link.aip.org/link/?JAPIAU/85/6912/1 |
| URI: | http://hdl.handle.net/10119/4542 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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