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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4669

Title: Impurity Diffusion in InGaAs Esaki Tunnel Diodes of Varied Defect Densities
Authors: ONO, Hideki
SUZUKI, Toshi-kazu
Keywords: impurity diffusion
current-enhanced diffusion
tunnel diodes
metamorphic devices
Issue Date: 2006-07-01
Publisher: 電子情報通信学会
Magazine name: IEICE TRANSACTIONS on Electronics
Volume: E89-C
Number: 7
Start page: 1020
End page: 1024
DOI: 10.1093/ietele/e89-c.7.1020
Abstract: We have fabricated and investigated InGaAs Esaki tunnel diodes, grown on GaAs or InP substrates, of varied defect densities. The tunnel diodes exhibit the same I-V characteristics in spite of the variation of defect density. Under the simple thermal annealing and forward current stress tests, the change in the valley current was not observed, indicating that defects were not increased. On the other hand, the reduction in the peak current due to the carbon diffusion was observed under both tests. The diffusion was enhanced by the stress current owing to the energy dissipation associated with the nonradiative electron-hole recombination. From the reduction rates of the peak current, we obtained the thermal and current-enhanced carbon diffusion constants in InGaAs, which are independent of defect density. Although thermal diffusion of carbon in InGaAs is comparable with that in GaAs, the current-induced enhancement of diffusion in InGaAs is extremely weaker than that in GaAs. The difference between activation energy of thermal and current-enhanced diffusion is 0.8 eV, which is independent of stress current density and close to InGaAs bandgap energy. This indicates that the current-enhanced diffusion is dominated by the energy dissipation associated with nonradiative band-to-band recombination. This enhancement mechanism well explains that the current-induced enhancement is independent of defect density and extremely weak. We also have found that the current-enhanced diffusion constant is approximately proportional to the square of current density, suggesting that the recombination in the depletion layer dominates the current-enhanced diffusion.
Rights: Copyright (C)2006 IEICE. H.Ono, S.Taniguchi, and T.Suzuki , IEICE TRANSACTIONS on Electronics, E89-C(7), 2006, 1020-1024. http://www.ieice.org/jpn/trans_online/
URI: http://hdl.handle.net/10119/4669
Material Type: publisher
Appears in Collections:f10-1. 雑誌掲載論文 (Journal Articles)

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