JAIST Repository >
Center for Nano Materials and Technology >
Articles >
Journal Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4840

Title: Epitaxial Lift-Off of InGaAs/InAlAs Metamorphic High Electron Mobility Heterostructures and Their van der Waals Bonding on AlN Ceramic Substrates
Authors: Jeong, Yonkil
Shindo, Masanori
Akabori, Masashi
Suzuki, Toshi-kazu
Issue Date: 2008-01-25
Publisher: The Japan Society of Applied Physics
Magazine name: Applied Physics Express
Volume: 1
Start page: 021201-1
End page: 021201-3
DOI: 10.1143/APEX.1.021201
Abstract: We have carried out epitaxial lift-off (ELO) of In_<0.57>Ga_<0.43>As/In_<0.56>Al_<0.44>As metamorphic high electron mobility heterostructures and their van der Waals bonding (VWB) on AlN ceramic substrates. Using a metamorphic heterostructure with an AlAs sacrificial layer and an InGaAs graded buffer grown on GaAs(001), thin film Hall-bar devices on AlN ceramic substrates were successfully fabricated by ELO and VWB. The Hall-bar devices exhibit very high electron mobilities, such as 11000 cm^2/(V-s) at room temperature (RT) and 84000 cm^2/(V-s) at 12 K. The RT mobility is the highest ever reported for ELO devices. This is the first report on ELO for metamorphic devices.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2008 The Japan Society of Applied Physics. Yonkil Jeong, Masanori Shindo, Masashi Akabori, and Toshi-kazu Suzuki, Applied Physics Express, 1, 2008, 021201. http://apex.ipap.jp/link?APEX/1/021201/
URI: http://hdl.handle.net/10119/4840
Material Type: author
Appears in Collections:f10-1. 雑誌掲載論文 (Journal Articles)

Files in This Item:

File Description SizeFormat
AP070085.pdf2348KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.

 


Contact : Library Information Section, Japan Advanced Institute of Science and Technology