JAIST Repository >
Center for Nano Materials and Technology >
Articles >
Journal Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4881

Title: High-temperature electron transport in metamorphic InGaAs/InAlAs heterostructures
Authors: Suzuki, T.
Ono, H.
Taniguchi, S.
Keywords: metamorphic InGaAs/InAlAs
electron mobility
electron saturation velocity
delay-time analysis
high-frequency performance
Issue Date: 2005-07
Publisher: Elsevier
Magazine name: Science and Technology of Advanced Materials
Volume: 6
Number: 5
Start page: 400
End page: 405
DOI: 10.1016/j.stam.2005.02.024
Abstract: We have investigated high-temperature electron transport in metamorphic InGaAs/InAlAs modulation-doped heterostructures with several indium contents. The electron mobility characterizing the low-field transport properties was obtained from the Hall measurements. From room temperature to 400 K, ~ 26 % decrease in the mobility was observed, which is well-explained by the polar-optical-phonon scattering theory. The indium content dependence of the mobility is explained by the theory with the Γ-valley electron mass. On the other hand, the electron saturation velocity characterizing the high-field transport properties was studied by means of the delay-time analysis of the transistors with gate length of 0.12-1.0 μm. We observed ~ 12 % decrease in the saturation velocity from room temperature to 400 K, which is smaller than that in the mobility and roughly consistent with the energy relaxation theory. In the indium content dependence of the saturation velocity, the effect of decrease in the electron density in the L- and X-valley is important. The high-frequency performance of the transistors at high temperatures shows a deterioration according to the decrease in the saturation velocity.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. T. Suzuki, H. Ono and S. Taniguchi, Science and Technology of Advanced Materials, 6(5), 2005, 400-405, http://dx.doi.org/10.1016/j.stam.2005.02.024
URI: http://hdl.handle.net/10119/4881
Material Type: author
Appears in Collections:f10-1. 雑誌掲載論文 (Journal Articles)

Files in This Item:

File Description SizeFormat
C4612.pdf797KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.

 


Contact : Library Information Section, Japan Advanced Institute of Science and Technology