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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/4938
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| タイトル: | N-channel field effect transistors with fullerene thin films and their application to logic gate circuit |
| 著者: | Kanbara, T.
Shibata, K.
Fujiki, S.
Kubozono, Y.
Kashino, S.
Urisu, T.
Sakai, M.
Fujiwara, A.
Kumashiro, R.
Tanigaki, K. |
| 発行日: | 2003-09-26 |
| 出版者: | Elsevier |
| 誌名: | Chemical Physics Letters |
| 巻: | 379 |
| 号: | 3-4 |
| 開始ページ: | 223 |
| 終了ページ: | 229 |
| DOI: | 10.1016/j.cplett.2003.07.025 |
| 抄録: | N-channel field effect transistors (FETs) were fabricated with thin films of C_<60> and Dy@C_<82>. A typical enhancement-type FET property was observed in C_<60> FET above 220 K. The mobility of C_<60> FET increased with increasing temperature. This fact suggests hopping transport as the conduction mechanism, with the activation energy of 0.29 eV. The Dy@C_<82> FET was found to be a normally-on type FET, which has a property different from that for C_<60> and C_<70> FETs. A complementary metal oxide semiconductor (CMOS) logic gate circuit was first fabricated with C_<60> and pentacene thin-film FETs. |
| Rights: | NOTICE: This is the author’s version of a work accepted for publication by Elsevier.
Changes resulting from the publishing process, including peer review, editing, corrections,
structural formatting and other quality control mechanisms, may not be reflected in this
document. Changes may have been made to this work since it was submitted for publication.
A definitive version was subsequently published in T. Kanbara, K. Shibata, S. Fujiki, Y. Kubozono, S. Kashino, T. Urisu, M. Sakai, A. Fujiwara, R. Kumashiro and K. Tanigaki, Chemical Physics Letters, 379(3-4), 2003, 223-229, http://dx.doi.org/10.1016/j.cplett.2003.07.025 |
| URI: | http://hdl.handle.net/10119/4938 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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