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Please use this identifier to cite or link to this item:
http://hdl.handle.net/10119/4938
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| Title: | N-channel field effect transistors with fullerene thin films and their application to logic gate circuit |
| Authors: | Kanbara, T.
Shibata, K.
Fujiki, S.
Kubozono, Y.
Kashino, S.
Urisu, T.
Sakai, M.
Fujiwara, A.
Kumashiro, R.
Tanigaki, K. |
| Issue Date: | 2003-09-26 |
| Publisher: | Elsevier |
| Magazine name: | Chemical Physics Letters |
| Volume: | 379 |
| Number: | 3-4 |
| Start page: | 223 |
| End page: | 229 |
| DOI: | 10.1016/j.cplett.2003.07.025 |
| Abstract: | N-channel field effect transistors (FETs) were fabricated with thin films of C_<60> and Dy@C_<82>. A typical enhancement-type FET property was observed in C_<60> FET above 220 K. The mobility of C_<60> FET increased with increasing temperature. This fact suggests hopping transport as the conduction mechanism, with the activation energy of 0.29 eV. The Dy@C_<82> FET was found to be a normally-on type FET, which has a property different from that for C_<60> and C_<70> FETs. A complementary metal oxide semiconductor (CMOS) logic gate circuit was first fabricated with C_<60> and pentacene thin-film FETs. |
| Rights: | NOTICE: This is the author’s version of a work accepted for publication by Elsevier.
Changes resulting from the publishing process, including peer review, editing, corrections,
structural formatting and other quality control mechanisms, may not be reflected in this
document. Changes may have been made to this work since it was submitted for publication.
A definitive version was subsequently published in T. Kanbara, K. Shibata, S. Fujiki, Y. Kubozono, S. Kashino, T. Urisu, M. Sakai, A. Fujiwara, R. Kumashiro and K. Tanigaki, Chemical Physics Letters, 379(3-4), 2003, 223-229, http://dx.doi.org/10.1016/j.cplett.2003.07.025 |
| URI: | http://hdl.handle.net/10119/4938 |
| Material Type: | author |
| Appears in Collections: | c10-1. 雑誌掲載論文 (Journal Articles)
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