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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4938

Title: N-channel field effect transistors with fullerene thin films and their application to logic gate circuit
Authors: Kanbara, T.
Shibata, K.
Fujiki, S.
Kubozono, Y.
Kashino, S.
Urisu, T.
Sakai, M.
Fujiwara, A.
Kumashiro, R.
Tanigaki, K.
Issue Date: 2003-09-26
Publisher: Elsevier
Magazine name: Chemical Physics Letters
Volume: 379
Number: 3-4
Start page: 223
End page: 229
DOI: 10.1016/j.cplett.2003.07.025
Abstract: N-channel field effect transistors (FETs) were fabricated with thin films of C_<60> and Dy@C_<82>. A typical enhancement-type FET property was observed in C_<60> FET above 220 K. The mobility of C_<60> FET increased with increasing temperature. This fact suggests hopping transport as the conduction mechanism, with the activation energy of 0.29 eV. The Dy@C_<82> FET was found to be a normally-on type FET, which has a property different from that for C_<60> and C_<70> FETs. A complementary metal oxide semiconductor (CMOS) logic gate circuit was first fabricated with C_<60> and pentacene thin-film FETs.
Rights: NOTICE: This is the author’s version of a work accepted for publication by Elsevier. Changes resulting from the publishing process, including peer review, editing, corrections, structural formatting and other quality control mechanisms, may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in T. Kanbara, K. Shibata, S. Fujiki, Y. Kubozono, S. Kashino, T. Urisu, M. Sakai, A. Fujiwara, R. Kumashiro and K. Tanigaki, Chemical Physics Letters, 379(3-4), 2003, 223-229, http://dx.doi.org/10.1016/j.cplett.2003.07.025
URI: http://hdl.handle.net/10119/4938
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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