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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/4967

Title: Characterization of α-phase aluminum oxide films deposited by filtered vacuum arc
Authors: Yamada-Takamura, Y.
Koch, F.
Maier, H.
Bolt, H.
Keywords: B. Infrared spectroscopy
C. Filtered arc
C. Ion bombardment
D. Aluminum oxide
Issue Date: 2001-07
Publisher: Elsevier
Magazine name: Surface and Coatings Technology
Volume: 142-144
Start page: 260
End page: 264
DOI: 10.1016/S0257-8972(01)01206-3
Abstract: Aluminum oxide (Al_2O_3) films were deposited by filtered vacuum arc method, using highly pure aluminum cathode and oxygen gas. Substrate temperature as high as 780 ℃ was necessary for the formation of corundum structured α- Al_2O_3. Applying RF power and thus negative bias voltage to the substrate enables to increase and control the energy of substrate bombarding ions. With the negative bias voltage of 200V, it was possible to deposit films containing α- Al_2O_3 with preheating substrate to temperature lower than 500℃. Increasing the voltage, thus increasing the ion energy, resulted in lowering of the critical preheating substrate temperature for formation of α-phase. Additionally, there was a clear difference in crystal orientation of α- Al_2O_3 between the films grown with and without substrate bias voltage, which was confirmed by infrared spectroscopy. Structure and phase evolution of the film were also studied by cross-sectional transmission electron microscopy.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. Y. Yamada-Takamura, F. Koch, H. Maier and H. Bolt, Surface and Coatings Technology, 142-144, 2001, 260-264, http://dx.doi.org/10.1016/S0257-8972(01)01206-3
URI: http://hdl.handle.net/10119/4967
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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