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このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/4968

タイトル: Growth process of cubic boron nitride films in bias sputter deposition
著者: Yamada, Yukiko
Tatebayashi, Yoshinao
Tsuda, Osamu
Yoshida, Toyonobu
発行日: 1997-02-28
出版者: Elsevier
誌名: Thin Solid Films
巻: 295
号: 1-2
開始ページ: 137
終了ページ: 141
DOI: 10.1016/S0040-6090(96)09285-1
抄録: Intending to study phase evolution of cubic boron nitride (cBN) films during RF bias sputter deposition, surfaces of the cBN films in different growth stages were examined systematically. Argon content at the film surface increased during the deposition of initial sp^2 bonded layer growth, and saturated at about 1.5 at.%, and remained constant after the formation and growth of cubic phase, accompanied with an increase of compressive stress up to 5 GPa. This increase of stress is confirmed to be the result of averaging film stress over the double-layered cBN film, that is, over low-stressed initial layer and high-stressed cubic layer. Atomic force microscope (AFM) observations in tapping mode revealed self-affine fractal nature and kinetic roughening of film surface during the growth, and root mean square (rms) roughness changed from 0.3 nm of an initial layer, to 0.9 nm accompanied with peculiar surface smoothing at the initial stage of cBN formation. Moreover, the evolution of the surface roughness was clearly characterized by the change of modes in each growth process, that is, an initial layer growth stage, a transition stage, and a cubic layer growth stage.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. Yukiko Yamada, Yoshinao Tatebayashi, Osamu Tsuda and Toyonobu Yoshida, Thin Solid Films, 295(1-2), 1997, 137-141, http://dx.doi.org/10.1016/S0040-6090(96)09285-1
URI: http://hdl.handle.net/10119/4968
資料タイプ: author
出現コレクション:c10-1. 雑誌掲載論文 (Journal Articles)

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