JAIST Repository >
School of Knowledge Science >
Articles >
Journal Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/5004

Title: Modeling of High-Speed, Large-Signal Transistor Switching Transients from s-Parameter Measurements
Authors: Ikawa, Yasuo
Eisenstadt, William R.
Dutton, Robert W.
Issue Date: 1982-04
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Magazine name: IEEE Transactions on Electron Devices
Volume: 29
Number: 4
Start page: 669
End page: 675
Abstract: A new technique has been developed to derive the large-signal transient response of semiconductor devices from small-signal frequency response data. The large-signal switching response can be calculated for an arbitrary input signal voltage and rise time. This new technique utilizes the Fourier transformation to combine arrays of small-signal data to compute the response waveform. The input waveform is decomposed into a superposition of small pulses. The response to each pulse is obtained by Fourier transformation techniques, using s-parameter data at appropriate bias points. The sum of these responses approximates the overall transient response. Simulations were performed for a GaAs MESFET for step inputs with the rise times of 8 ns and 150 ps. Good agreement was obtained between simulated waveforms and measured output waveforms in rise time, magnitude, and waveform shape. This algorithm is general and will work for other measured small-signal transfer parameters as functions of frequency and bias.
Rights: Copyright (C)1982 IEEE. Reprinted from IEEE Transactions on Electron Devices, 29(4), 1982, 669-675. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of JAIST's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
URI: http://hdl.handle.net/10119/5004
Material Type: publisher
Appears in Collections:a10-1. 雑誌掲載論文 (Journal Articles)

Files in This Item:

File Description SizeFormat
B3749-b.pdf643KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.


Contact : Library Information Section, Japan Advanced Institute of Science and Technology