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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/5037

Title: Nondestructive Readout of Ferroelectric-Gate Field-Effect Transistor Memory With an Intermediate Electrode by Using an Improved Operation Method
Authors: Horita, Susumu
Trinh, Bui Nguyen Quoc
Keywords: ferroelectric gate
ferroelectric memory
nondestructive readout
reading endurance
retention
Issue Date: 2008-11
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Magazine name: IEEE Transactions on Electron Devices
Volume: 55
Number: 11
Start page: 3200
End page: 3207
DOI: 10.1109/TED.2008.2003329
Abstract: We investigated the reading and writing of ferroelectric-gate field-effect transistor memory with an intermediate electrode (IF-FET) to achieve perfect nondestructive readouts. In the previous operation method, although the difference in output voltage ΔV_O between positive P_r^+ and negative P_r^- remanent polarization memory states was adequate for the first reading time, the nondestructive readout for the P_r^- state was seriously degraded due to the generation of nonreturning domains. In order to solve this issue, a P_r^0 memory state was used instead of the previous P_r^- memory state. The P_r}^0 state was induced by applying a pulse combined with a positive voltage V_W^+ and a negative voltage (V_W^-). V_W^+ was to reset the previously written memory states, and V_W^- was to control the amount of remanent polarization. In addition, in order to extinguish perfectly the nonreturning domains, a negative voltage V_R^- was applied for data reading, following a positive voltage V_R^+, where V_R^+ was determined for clear decoding. The appropriate heights of the writing and reading voltages were determined individually from the viewpoint of good nondestructive readout and large ΔV_O. As a result, it was verified experimentally that the reading endurance reached more than 10^8 cycles and that the retention time of IF-FET at 150 ℃ was possible to exceed ten years.
Rights: Copyright (C) 2008 IEEE. Reprinted from IEEE Transactions on Electron Devices, 55(11), 2008, 3200-3207. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of JAIST's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
URI: http://hdl.handle.net/10119/5037
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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