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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/7932

Title: 窒化物半導体薄膜の走査プローブ顕微鏡による微視的評価
Authors: 高村(山田), 由起子
王, 治涛
藤川, 安仁
櫻井, 利夫
Keywords: scanning probe microscopy
gallium nitride
molecular beam epitaxy
polarity
surface reconstruction
Issue Date: 2007
Publisher: 応用物理学会
Magazine name: 応用物理
Volume: 76
Number: 5
Start page: 499
End page: 504
Abstract: 近年,窒化物半導体の薄膜成長装置と走査プローブ顕微鏡を組み合わせ,その表面を原子レベルで評価することが可能となった.主な成果として,膜の極性と表面の組成に依存する表面再構成構造の詳細が明らかになったことが挙げられる.最近ではこの手法を用いて,窒化物薄膜成長の極性制御,窒化物薄膜のドライエッチング過程,窒化物薄膜上への金属薄膜成長過程などの研究が展開されている.今後は,強磁性体プローブを用いたスピン偏極走査型トンネル顕微鏡の窒化物希薄磁性半導体への応用など,構造観察に加えて,局所的な物性測定が可能な点を生かした研究が盛んになることが期待される.: Atomistic study of nitride thin films became possible by combining a high vacuum film growth system to an ultrahigh vacuum scanning probe microscopy system. The detailed studies revealed various surface reconstructions depending on the polarity and the surface stoichiometry. Recently, the method has been successfully applied to the studies of the polarity control of GaN growth on Si, the halogen etching of nitride films, and the growth process of thin metal films on nitride. The applications taking full advantage of the capability of atomic scale characterization, such as the spin-polarized scanning tunneling microscopy of diluted magnetic semiconducting nitride films, are expected to be successful in the near future.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2007 The Japan Society of Applied Physics. 高村(山田)由起子、王治涛、藤川安仁、櫻井利夫, 応用物理, 76(5), 2007, 499-504. http://www.jsap.or.jp/ap/2007/ob7605/p760499.html
URI: http://hdl.handle.net/10119/7932
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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