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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/8165

Title: Formation of micrometer-order-thick poly-Si films on textured glass substrates by flash lamp annealing of a-Si films prepared by catalytic chemical vapor deposition
Authors: Ohdaira, K.
Fujiwara, T.
Endo, Y.
Nishioka, K.
Matsumura, H.
Keywords: A1. Recrystallization
B2. Semiconducting silicon
B3. Solar cells
A3. Chemical vapor deposition processes
Issue Date: 2009-01-15
Publisher: Elsevier
Magazine name: Journal of Crystal Growth
Volume: 311
Number: 3
Start page: 769
End page: 772
DOI: 10.1016/j.jcrysgro.2008.09.093
Abstract: We investigate the microstructures of polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of 4.5-μm-thick precursor a-Si films prepared by catalytic chemical vapor deposition (Cat-CVD) on Cr-coated textured glass substrates. Crystallization of a-Si is performed, keeping the dome-shaped structure formed during deposition of a-Si. The poly-Si film consists of densely-packed fine grains with sizes on the order of 10 nm. The grain size tends to increase approaching the Si/Cr interface, which can be understood as the result of solid-phase nucleation and following crystallization. Minority carrier lifetimes of the poly-Si films are worse than those formed on flat substrates. This degradation might be due to gaps in the Si layer formed during a-Si deposition or FLA.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. K. Ohdaira, T. Fujiwara, Y. Endo, K. Nishioka, and H. Matsumura, Journal of Crystal Growth, 311(3), 2009, 769-772, http://dx.doi.org/10.1016/j.jcrysgro.2008.09.093
URI: http://hdl.handle.net/10119/8165
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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