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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/8166

Title: Poly-Si films with long carrier lifetime prepared by rapid thermal annealing of Cat-CVD amorphous silicon thin films
Authors: Ohdaira, Keisuke
Abe, Yuki
Fukuda, Makoto
Nishizaki, Shogo
Usami, Noritaka
Nakajima, Kazuo
Karasawa, Takeshi
Torikai, Tetsuya
Matsumura, Hideki
Keywords: Annealing
Raman scattering
secondary ion mass spectroscopy (SIMS)
Solar cells
Minority carrier lifetime
Flash lamp annealing
Issue Date: 2008-01-15
Publisher: Elsevier
Magazine name: Thin Solid Films
Volume: 516
Number: 5
Start page: 600
End page: 603
DOI: 10.1016/j.tsf.2007.06.216
Abstract: Polycrystalline silicon (poly-Si) films thicker than 1.5 μm, consisting of dense small grains called nano-grain poly-Si (ngp-Si), are formed by flash lamp annealing (FLA) of amorphous silicon (a-Si) films prepared by catalytic chemical vapor deposition (Cat-CVD) method. Crystallinity of the ngp-Si films can be controlled by changing lamp irradiance. Secondary ion mass spectroscopy (SIMS) profiles of dopants in the ngp-Si films after FLA shows no serious diffusion. A minority carrier lifetime of over 5 μs is observed from these ngp-Si films after defect termination process using high pressure water vapor annealing (HPWVA), showing possibility of application for high-efficient thin film solar cells.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. Keisuke Ohdaira, Yuki Abe, Makoto Fukuda, Shogo Nishizaki, Noritaka Usami, Kazuo Nakajima, Takeshi Karasawa, Tetsuya Torikai and Hideki Matsumura, Thin Solid Films, 516(5), 2008, 600-603, http://dx.doi.org/10.1016/j.tsf.2007.06.216
URI: http://hdl.handle.net/10119/8166
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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