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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/8167

Title: Precursor Cat-CVD a-Si films for the formation of high-quality poly-Si films on glass substrates by flash lamp annealing
Authors: Ohdaira, Keisuke
Shiba, Kazuhiro
Takemoto, Hiroyuki
Fujiwara, Tomoko
Endo, Yohei
Nishizaki, Shogo
Jang, Young Rae
Matsumura, Hideki
Keywords: Catalytic CVD
Flash lamp annealing
Polycrystalline Si
Hydrogen content
Glass substrate
Plasma-enhanced CVD
Issue Date: 2009-04-30
Publisher: Elsevier
Magazine name: Thin Solid Films
Volume: 517
Number: 12
Start page: 3472
End page: 3475
DOI: 10.1016/j.tsf.2009.01.075
Abstract: Amorphous Si (a-Si) films with lower hydrogen contents show better adhesion to glass during flash lamp annealing (FLA). The 2.0-μm-thick a-Si films deposited by plasma-enhanced chemical vapor deposition (PECVD), containing 10% hydrogen, start to peel off even at a lamp irradiance lower than that required for crystallization, whereas a-Si films deposited by catalytic CVD (Cat-CVD) partially adhere even after crystallization. Dehydrogenated Cat-CVD a-Si films show much better adhesion to glass, and are converted to polycrystalline Si (poly-Si) without serious peeling, but are accompanied by the generation of crack-like structures. These facts demonstrate the superiority of as-deposited Cat-CVD a-Si films as a precursor material for micrometer-thick poly-Si formed by FLA.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. Keisuke Ohdaira, Kazuhiro Shiba, Hiroyuki Takemoto, Tomoko Fujiwara, Yohei Endo, Shogo Nishizaki, Young Rae Jang, and Hideki Matsumura, Thin Solid Films, 517(12), 2009, 3472-3475, http://dx.doi.org/10.1016/j.tsf.2009.01.075
URI: http://hdl.handle.net/10119/8167
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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