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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/8171
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| タイトル: | High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition |
| 著者: | Ohdaira, Keisuke
Nishizaki, Shogo
Endo, Yohei
Fujiwara, Tomoko
Usami, Noritaka
Nakajima, Kazuo
Matsumura, Hideki |
| キーワード: | polycrystalline Si
flash lamp annealing
crystallization
minority carrier lifetime
high-pressure water vapor annealing |
| 発行日: | 2007-11-06 |
| 出版者: | The Japan Society of Applied Physics |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 46 |
| 号: | 11 |
| 開始ページ: | 7198 |
| 終了ページ: | 7203 |
| DOI: | 10.1143/JJAP.46.7198 |
| 抄録: | Polycrystalline silicon (poly-Si) films with a thickness over 1 μm are formed by the flash lamp annealing (FLA), with a duration of less than 10 ms, of precursor amorphous silicon (a-Si) films prepared by catalytic chemical vapor deposition (Cat-CVD) on quartz substrates. Thicker a-Si films can be crystallized under lower lamp irradiance, which can be understood by considering both the total generated heat in the a-Si films and the thermal diffusion into the quartz substrates. Results of microwave photoconductivity decay (μ-PCD) measurement indicate that high-pressure water vapor annealing (HPWVA) is effective for improving the minority carrier lifetime of the poly-Si films. The film with a thickness of 1.5 μm crystallized under a high lamp irradiance shows minority carrier lifetimes over 5 μs, indicating the high feasibility of applying the crystalline film to high-efficiency thin-film solar cells. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2007 The Japan Society of Applied Physics. Keisuke Ohdaira, Shogo Nishizaki, Yohei Endo, Tomoko Fujiwara, Noritaka Usami, Kazuo Nakajima, and Hideki Matsumura, Japanese Journal of Applied Physics, 46(11), 2007, 7198-7203. http://jjap.ipap.jp/link?JJAP/46/7198/ |
| URI: | http://hdl.handle.net/10119/8171 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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| Jpn_J_Appl_Phys_46_7198_2007.pdf | | 447Kb | Adobe PDF | 見る/開く |
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