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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/8172

Title: Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrate
Authors: Ohdaira, Keisuke
Endo, Yohei
Fujiwara, Tomoko
Nishizaki, Shogo
Matsumura, Hideki
Keywords: flash lamp annealing
millisecond treatment
solar cell
Issue Date: 2007-12-06
Publisher: The Japan Society of Applied Physics
Magazine name: Japanese Journal of Applied Physics
Volume: 46
Number: 12
Start page: 7603
End page: 7606
DOI: 10.1143/JJAP.46.7603
Abstract: Polycrystalline silicon (poly-Si) films as thick as 4.5 μm are prepared by flash lamp annealing (FLA) of amorphous silicon (a-Si) films without thermal damage onto glass substrates. The a-Si films are deposited by catalytic chemical vapor deposition (Cat-CVD) at 320 ℃. Since the hydrogen content in Cat-CVD a-Si films is as low as 3 at. %, they are easily converted to poly-Si without any dehydrogenation treatment. Chromium (Cr) films 60 nm thick are coated onto glass substrates to achieve high area uniformity of poly-Si formation. Secondary ion mass spectroscopy (SIMS) reveals that no diffused Cr atoms are detected inside poly-Si films and that crystallization is not the well-known metal-induced crystallization. Raman spectra from the poly-Si films show high crystallinity close to 1, and the photoluminescence (PL) spectrum demonstrates clear band-to-band transition, indicating the formation of device-quality poly-Si by FLA of Cat-CVD a-Si.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2007 The Japan Society of Applied Physics. Keisuke Ohdaira, Yohei Endo, Tomoko Fujiwara, Shogo Nishizaki, and Hideki Matsumura, Japanese Journal of Applied Physics, 46(12), 2007, 7603-7606. http://jjap.ipap.jp/link?JJAP/46/7603/
URI: http://hdl.handle.net/10119/8172
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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