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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/8183

Title: Drastic Improvement of Minority Carrier Lifetimes Observed in Hydrogen-Passivated Flash-Lamp-Crystallized Polycrystalline Silicon Films
Authors: Ohdaira, Keisuke
Takemoto, Hiroyuki
Shiba, Kazuhiro
Matsumura, Hideki
Issue Date: 2009-06-12
Publisher: The Japan Society of Applied Physics
Magazine name: Applied Physics Express
Volume: 2
Start page: 061201-1
End page: 061201-3
DOI: 10.1143/APEX.2.061201
Abstract: Polycrystalline silicon (poly-Si) films 4.5 μm thick, formed on glass substrates by flash lamp annealing (FLA) of precursor amorphous Si (a-Si) films, show remarkably long minority carrier lifetimes of approximately 100 μs after post-furnace annealing under N_2 ambient. Even after crystallization by FLA, there remain a large number of H atoms, on the order of 1^<21>/cm^3, which probably effectively act to passivate dangling bonds in the poly-Si films. A minority carrier diffusion length of approximately 60 μm, estimated using the lifetime value, indicates high feasibility of realizing thin-film solar cells using this material.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2009 The Japan Society of Applied Physics. Keisuke Ohdaira, Hiroyuki Takemoto, Kazuhiro Shiba, and Hideki Matsumura, Applied Physics Express, 2, 2009, 061201.. http://apex.ipap.jp/link?APEX/2/061201/
URI: http://hdl.handle.net/10119/8183
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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