|
JAIST Repository >
c. マテリアルサイエンス研究科・マテリアルサイエンス系 >
c10. 学術雑誌論文等 >
c10-1. 雑誌掲載論文 >
このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/8476
|
| タイトル: | Disturb-Free Writing Operation for Ferroelectric-Gate Field-Effect Transistor Memories with Intermediate Electrodes |
| 著者: | Horita, Susumu
Trinh, Bui Nguyen Quoc |
| キーワード: | Disturb free
ferroelectric-gate memory
ferroelectric memory
nondestructive readout
write disturbance |
| 発行日: | 2009-12 |
| 出版者: | Institute of Electrical and Electronics Engineers (IEEE) |
| 誌名: | IEEE Transactions on Electron Devices |
| 巻: | 56 |
| 号: | 12 |
| 開始ページ: | 3090 |
| 終了ページ: | 3096 |
| DOI: | 10.1109/TED.2009.2032744 |
| 抄録: | To achieve disturb-free writing, we proposed a new writing operation for ferroelectric-gate field-effect transistor memories with intermediate electrodes. The writing voltages V_W applied to the wordlines for Pr^+ and Pr^0 memory states are the same pulse magnitudes, which consist of V_W^ + followed by V_W^ -, whereas the bias timings of the bitline voltages differ from each other. The bitline voltage for the Pr^+ memory state is set high when V_W is set V_W^ +, and it is set to low by the time when V_W is changed to V_W^-. On the other hand, the bitline voltage for the Pr^0 memory state is set high until the whole writing pulse of (V_W^+ + V_W^-) is finished. This is verified experimentally using a discrete circuit, which showed that the new writing operation achieves disturb-free writing. The memory consists of two transistors for data writing and reading. With the obtained experimental results, we discuss the possibilities of high integration of this memory as well as low reading voltage. |
| Rights: | Copyright (C) 2009 IEEE. Reprinted from IEEE Transactions on Electron Devices, 56(12), 2009, 3090-3096. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of JAIST's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it. |
| URI: | http://hdl.handle.net/10119/8476 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
|
このアイテムのファイル:
| ファイル |
記述 |
サイズ | 形式 |
|---|
| 09IEEEDisturbFinalPDF.pdf | | 651Kb | Adobe PDF | 見る/開く |
|
当システムに保管されているアイテムはすべて著作権により保護されています。
|
