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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/8476

Title: Disturb-Free Writing Operation for Ferroelectric-Gate Field-Effect Transistor Memories with Intermediate Electrodes
Authors: Horita, Susumu
Trinh, Bui Nguyen Quoc
Keywords: Disturb free
ferroelectric-gate memory
ferroelectric memory
nondestructive readout
write disturbance
Issue Date: 2009-12
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Magazine name: IEEE Transactions on Electron Devices
Volume: 56
Number: 12
Start page: 3090
End page: 3096
DOI: 10.1109/TED.2009.2032744
Abstract: To achieve disturb-free writing, we proposed a new writing operation for ferroelectric-gate field-effect transistor memories with intermediate electrodes. The writing voltages V_W applied to the wordlines for Pr^+ and Pr^0 memory states are the same pulse magnitudes, which consist of V_W^ + followed by V_W^ -, whereas the bias timings of the bitline voltages differ from each other. The bitline voltage for the Pr^+ memory state is set high when V_W is set V_W^ +, and it is set to low by the time when V_W is changed to V_W^-. On the other hand, the bitline voltage for the Pr^0 memory state is set high until the whole writing pulse of (V_W^+ + V_W^-) is finished. This is verified experimentally using a discrete circuit, which showed that the new writing operation achieves disturb-free writing. The memory consists of two transistors for data writing and reading. With the obtained experimental results, we discuss the possibilities of high integration of this memory as well as low reading voltage.
Rights: Copyright (C) 2009 IEEE. Reprinted from IEEE Transactions on Electron Devices, 56(12), 2009, 3090-3096. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of JAIST's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
URI: http://hdl.handle.net/10119/8476
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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