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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/8497

Title: Thin film p-i-n poly-Si solar cells directly converted from p-i-n a-Si structures by a single shot of flash lamp
Authors: Ohdaira, Keisuke
Fujiwara, Tomoko
Endo, Yohei
Shiba, Kazuhiro
Takemoto, Hiroyuki
Nishizaki, Shogo
Jang, Young Rae
Nishioka, Kensuke
Matsumura, Hideki
Issue Date: 2008-05
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Magazine name: 33rd IEEE Photovolatic Specialists Conference, 2008. PVSC '08.
Start page: 1
End page: 3
DOI: 10.1109/PVSC.2008.4922767
Abstract: We propose a novel production method to fabricate high-efficiency thin-film poly-Si solar cells using flash lamp annealing (FLA) for crystallization of micrometer-order-thick p-i-n amorphous silicon (a-Si) structure, prepared by catalytic chemical vapor deposition (Cat-CVD, Hot-Wire CVD) on low-temperature glass substrates and following high-pressure water vapor annealing for defect passivation. The FLA enables us to crystallize a-Si films with only one pulse of less than 10 ms duration, and use of Cat-CVD provides a-Si cost-effectively because of high deposition rate of a-Si over 10 nm/s. Secondary ion mass spectroscopy (SIMS) profiles reveal that diffusion of dopants in p- or n-type layers is sufficiently suppressed after FLA, indicating possibility of simultaneous crystallization of p-i-n stacked a-Si films. High-pressure water vapor annealing (HPWVA) enhances the minority carrier lifetime of the poly-Si up to about 10 μs and drastically improves diode properties of the p-i-n poly-Si structure. No light-induced degradation is observed in the solar cell property of the poly-Si solar cell after 24-hour 1-sun light soaking.
Rights: Copyright (C) 2008 IEEE. Reprinted from 33rd IEEE Photovolatic Specialists Conference, 2008. PVSC '08., 1-3. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of JAIST's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
URI: http://hdl.handle.net/10119/8497
Material Type: publisher
Appears in Collections:c11-1. 会議発表論文 (Conference Papers)

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