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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/8538

Title: Suppression of exciton annihilation at high current densities in organic light-emitting diode resulting from energy-level alignments of carrier transport layers
Authors: Matsushima, Toshinori
Adachi, Chihaya
Issue Date: 2008-02-14
Publisher: American Institute of Physics
Magazine name: Applied Physics Letters
Volume: 92
Number: 6
Start page: 063306-1
End page: 063306-3
DOI: 10.1063/1.2844891
Abstract: We manufactured an organic light-emitting diode (OLED) in which the hole and electron transport layers are chemically doped with p- and n-type dopants and energy levels in between neighboring carrier transport layers and emitting molecules are aligned. From the results of the electroluminescence (EL) characteristics of the OLED, we found that (1) the OLED has an extremely low driving voltage of 2.65±0.05 0.05 V at a current density of 100 mA/cm^2; (2) the onset voltage of EL (≈2.4 V) corresponds to the photon energy of emitting molecules (≈2.5 eV), while the onset voltage of currents is ≈1.8 V; and (3) a decrease in EL efficiency at high current densities can be suppressed by matching the energy levels.
Rights: Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Toshinori Matsushima, Chihaya Adachi, Applied Physics Letters, 92(6), 063306 (2008) and may be found at http://link.aip.org/link/?APPLAB/92/063306/1
URI: http://hdl.handle.net/10119/8538
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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