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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/8856

Title: Explosive crystallization of amorphous silicon films by flash lamp annealing
Authors: Ohdaira, Keisuke
Fujiwara, Tomoko
Endo, Yohei
Nishizaki, Shogo
Matsumura, Hideki
Issue Date: 2009-08-25
Publisher: American Institute of Physics
Magazine name: Journal of Applied Physics
Volume: 106
Number: 4
Start page: 044907-1
End page: 044907-8
DOI: 10.1063/1.3195089
Abstract: Explosive crystallization (EC) takes place during flash lamp annealing in micrometer-thick amorphous Si (a-Si) films deposited on glass substrates. The EC starts from the edges of the a-Si films due to additional heating from flash lamp light. This is followed by lateral crystallization with a velocity on the order of m/s, leaving behind periodic microstructures in which regions containing several hundreds of nm-ordered grains and regions consisting of only 10-nm-sized fine grains alternatively appear. The formation of the dense grains can be understood as explosive solid-phase nucleation, whereas the several hundreds of nanometer-sized grains, stretched in the lateral direction, are probably formed through explosive liquid-phase epitaxy. This phenomenon will be applied to the high-throughput formation of thick poly-Si films for solar cells.
Rights: Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Keisuke Ohdaira, Tomoko Fujiwara, Yohei Endo, Shogo Nishizaki, and Hideki Matsumura, Journal of Applied Physics, 106(4), 044907 (2009) and may be found at http://link.aip.org/link/JAPIAU/v106/i4/p044907/s1
URI: http://hdl.handle.net/10119/8856
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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