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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/9051

Title: Thin-film polycrystalline silicon solar cells formed by flash lamp annealing of a-Si films
Authors: Endo, Yohei
Fujiwara, Tomoko
Ohdaira, Keisuke
Nishizaki, Shogo
Nishioka, Kensuke
Matsumura, Hideki
Keywords: Flash lamp annealing
Polycrystalline silicon
High-pressure water vapor annealing
Minority carrier lifetime
Issue Date: 2010-06-30
Publisher: Elsevier
Magazine name: Thin Solid Films
Volume: 518
Number: 17
Start page: 5003
End page: 5006
DOI: 10.1016/j.tsf.2010.03.008
Abstract: We have fabricated thin-film solar cells using polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of 4.5-µm-thick amorphous Si (a-Si) films deposited on Cr-coated glass substrates. High-pressure water-vapor annealing (HPWVA) is effective to improve the minority carrier lifetime of poly-Si films up to 10 µs long. Diode and solar cell characteristics can be seen only in the solar cells formed using poly-Si films after HPWVA, indicating the need for defect termination. The actual solar cell operation demonstrated indicates feasibility of using poly-Si films formed through FLA on glass substrates as a thin-film solar cell material.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. Yohei Endo, Tomoko Fujiwara, Keisuke Ohdaira, Shogo Nishizaki, Kensuke Nishioka, and Hideki Matsumura, Thin Solid Films, 518(17), 2010, 5003-5006, http://dx.doi.org/10.1016/j.tsf.2010.03.008
URI: http://hdl.handle.net/10119/9051
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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