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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/9072

Title: Growth of single-crystalline zirconium diboride thin film on sapphire
Authors: Bera, Sambhunath
Sumiyoshi, Yuichiro
Yamada-Takamura, Yukiko
Keywords: Epitaxy
Thin film
Issue Date: 2009-09-25
Publisher: American Institute of Physics
Magazine name: Journal of Applied Physics
Volume: 106
Number: 6
Start page: 063531-1
End page: 063531-3
DOI: 10.1063/1.3226881
Abstract: Conducting and reflecting thin film of ZrB_2, which has lattice mismatch of only 0.6% to GaN, was grown epitaxially on sapphire substrate [α-Al_2O_3(0001)] via thermal decomposition of Zr(BH_4)_4. In situ reflection high energy electron diffraction and ex situ x-ray diffraction analyses indicate that the epitaxial relationship is singular, i.e., ZrB_2[0001]∥Al_2O_3[0001] and ZrB_2[110]∥Al_2O_3[100]. X-ray photoelectron spectroscopy and scanning tunneling microscopy revealed that the oxide-free surface could be recovered by heating the film at approximately 750 °C under ultrahigh vacuum, which demonstrates its suitability as a template for the growth of nitride semiconductors.
Rights: Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Sambhunath Bera, Yuichiro Sumiyoshi, and Yukiko Yamada-Takamura, Journal of Applied Physics, 106(6), 063531 (2009) and may be found at http://link.aip.org/link/JAPIAU/v106/i6/p063531/s1
URI: http://hdl.handle.net/10119/9072
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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