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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/9072
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| タイトル: | Growth of single-crystalline zirconium diboride thin film on sapphire |
| 著者: | Bera, Sambhunath
Sumiyoshi, Yuichiro
Yamada-Takamura, Yukiko |
| キーワード: | Epitaxy
Thin film
diboride
CVD |
| 発行日: | 2009-09-25 |
| 出版者: | American Institute of Physics |
| 誌名: | Journal of Applied Physics |
| 巻: | 106 |
| 号: | 6 |
| 開始ページ: | 063531-1 |
| 終了ページ: | 063531-3 |
| DOI: | 10.1063/1.3226881 |
| 抄録: | Conducting and reflecting thin film of ZrB_2, which has lattice mismatch of only 0.6% to GaN, was grown epitaxially on sapphire substrate [α-Al_2O_3(0001)] via thermal decomposition of Zr(BH_4)_4. In situ reflection high energy electron diffraction and ex situ x-ray diffraction analyses indicate that the epitaxial relationship is singular, i.e., ZrB_2[0001]∥Al_2O_3[0001] and ZrB_2[110]∥Al_2O_3[100]. X-ray photoelectron spectroscopy and scanning tunneling microscopy revealed that the oxide-free surface could be recovered by heating the film at approximately 750 °C under ultrahigh vacuum, which demonstrates its suitability as a template for the growth of nitride semiconductors. |
| Rights: | Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Sambhunath Bera, Yuichiro Sumiyoshi, and Yukiko Yamada-Takamura, Journal of Applied Physics, 106(6), 063531 (2009) and may be found at http://link.aip.org/link/JAPIAU/v106/i6/p063531/s1 |
| URI: | http://hdl.handle.net/10119/9072 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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| 14295-1.pdf | | 291Kb | Adobe PDF | 見る/開く |
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