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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/9199

Title: An organic nonvolatile memory using space charge polarization of a gate dielectric
Authors: Konno, Kodai
Sakai, Heisuke
Matsushima, Toshinori
Murata, Hideyuki
Keywords: Organic nonvolatile memory
Organic field-effect transistor (OFET)
Gate dielectric
Space charge polarization
Polymethylmethacryrate (PMMA)
10-Methyl-9-phenylacridinium perchlorate (MPA^+ClO_4^−)
Issue Date: 2009-07-10
Publisher: Elsevier
Magazine name: Thin Solid Films
Volume: 518
Number: 2
Start page: 534
End page: 536
DOI: 10.1016/j.tsf.2009.07.014
Abstract: We realize a nonvolatile and rewritable memory effect in an organic field-effect transistor (OFET) structure using polymethylmethacryrate (PMMA) dispersed with 10-methyl-9-phenylacridinium perchlorate (MPA^+ClO_4^−) as a gate dielectric. Applying a voltage between a top source-drain electrode and a bottom gate electrode induces electrophoresis of two ions of MPA^+ and ClO_4^− towards the corresponding electrodes in the memory devices. The drain currents of the memory devices markedly increase from 10^<−9> A to 10^<−2> A under no gate voltage condition due to the strong space charge polarization effect. Our memory devices have excellent electrical bistability and retention characteristics, i.e. the memory on/off ratio reached 10^7 and the drain current maintained 40% of the initial value after 10^4 s.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. Kodai Konno, Heisuke Sakai, Toshinori Matsushima and Hideyuki Murata, Thin Solid Films, 518(2), 2009, 534-536, http://dx.doi.org/10.1016/j.tsf.2009.07.014
URI: http://hdl.handle.net/10119/9199
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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