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https://hdl.handle.net/10119/9199
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| Title: | An organic nonvolatile memory using space charge polarization of a gate dielectric |
| Authors: | Konno, Kodai
Sakai, Heisuke
Matsushima, Toshinori
Murata, Hideyuki |
| Keywords: | Organic nonvolatile memory
Organic field-effect transistor (OFET)
Gate dielectric
Space charge polarization
Polymethylmethacryrate (PMMA)
10-Methyl-9-phenylacridinium perchlorate (MPA^+ClO_4^−) |
| Issue Date: | 2009-07-10 |
| Publisher: | Elsevier |
| Magazine name: | Thin Solid Films |
| Volume: | 518 |
| Number: | 2 |
| Start page: | 534 |
| End page: | 536 |
| DOI: | 10.1016/j.tsf.2009.07.014 |
| Abstract: | We realize a nonvolatile and rewritable memory effect in an organic field-effect transistor (OFET) structure using polymethylmethacryrate (PMMA) dispersed with 10-methyl-9-phenylacridinium perchlorate (MPA^+ClO_4^−) as a gate dielectric. Applying a voltage between a top source-drain electrode and a bottom gate electrode induces electrophoresis of two ions of MPA^+ and ClO_4^− towards the corresponding electrodes in the memory devices. The drain currents of the memory devices markedly increase from 10^<−9> A to 10^<−2> A under no gate voltage condition due to the strong space charge polarization effect. Our memory devices have excellent electrical bistability and retention characteristics, i.e. the memory on/off ratio reached 10^7 and the drain current maintained 40% of the initial value after 10^4 s. |
| Rights: | NOTICE: This is the author's version of a work accepted for publication by Elsevier. Kodai Konno, Heisuke Sakai, Toshinori Matsushima and Hideyuki Murata, Thin Solid Films, 518(2), 2009, 534-536, http://dx.doi.org/10.1016/j.tsf.2009.07.014 |
| URI: | https://hdl.handle.net/10119/9199 |
| Material Type: | author |
| Appears in Collections: | c10-1. 雑誌掲載論文 (Journal Articles)
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