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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/9521

Title: Surface electronic structure of ZrB_2 buffer layers for GaN growth on Si wafers
Authors: Yamada-Takamura, Yukiko
Bussolotti, Fabio
Fleurence, Antoine
Bera, Sambhunath
Friedlein, Raine
Keywords: thin film
epitaxy
electronic structure
Issue Date: 2010-08-18
Publisher: American Institute of Physics
Magazine name: Applied Physics Letters
Volume: 97
Number: 7
Start page: 073109-1
End page: 073109-3
DOI: 10.1063/1.3481414
Abstract: The electronic structure of epitaxial、 predominantly single-crystalline thin films of zirconium diboride (ZrB_2), a lattice-matching, conductive ceramic to GaN、 grown on Si(111) was studied using angle-resolved ultraviolet photoelectron spectroscopy. The existence of Zr-derived surface states dispersing along the Gamma-M direction indicates a metallic character provided by a two-dimensional Zr-layer at the surface. Together with the measured work function, the results demonstrate that the surface electronic properties of such thin ZrB_2(0001) buffer layers are comparable to those of the single crystals promising excellent conduction between nitride layers and the substrate in vertical light-emitting diodes on economic substrates.
Rights: Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Yukiko Yamada-Takamura, Fabio Bussolotti, Antoine Fleurence, Sambhunath Bera, and Rainer Friedlein, Applied Physics Letters, 97(7), 073109 (2010) and may be found at http://link.aip.org/link/APPLAB/v97/i7/p073109/s1
URI: http://hdl.handle.net/10119/9521
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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