|
JAIST Repository >
c. マテリアルサイエンス研究科・マテリアルサイエンス系 >
c10. 学術雑誌論文等 >
c10-1. 雑誌掲載論文 >
このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/9521
|
| タイトル: | Surface electronic structure of ZrB_2 buffer layers for GaN growth on Si wafers |
| 著者: | Yamada-Takamura, Yukiko
Bussolotti, Fabio
Fleurence, Antoine
Bera, Sambhunath
Friedlein, Raine |
| キーワード: | thin film
epitaxy
electronic structure |
| 発行日: | 2010-08-18 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 97 |
| 号: | 7 |
| 開始ページ: | 073109-1 |
| 終了ページ: | 073109-3 |
| DOI: | 10.1063/1.3481414 |
| 抄録: | The electronic structure of epitaxial、 predominantly single-crystalline thin films of zirconium diboride (ZrB_2), a lattice-matching, conductive ceramic to GaN、 grown on Si(111) was studied using angle-resolved ultraviolet photoelectron spectroscopy. The existence of Zr-derived surface states dispersing along the Gamma-M direction indicates a metallic character provided by a two-dimensional Zr-layer at the surface. Together with the measured work function, the results demonstrate that the surface electronic properties of such thin ZrB_2(0001) buffer layers are comparable to those of the single crystals promising excellent conduction between nitride layers and the substrate in vertical light-emitting diodes on economic substrates. |
| Rights: | Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Yukiko Yamada-Takamura, Fabio Bussolotti, Antoine Fleurence, Sambhunath Bera, and Rainer Friedlein, Applied Physics Letters, 97(7), 073109 (2010) and may be found at http://link.aip.org/link/APPLAB/v97/i7/p073109/s1 |
| URI: | http://hdl.handle.net/10119/9521 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
|
このアイテムのファイル:
| ファイル |
記述 |
サイズ | 形式 |
|---|
| 15649-1.pdf | | 1911Kb | Adobe PDF | 見る/開く |
|
当システムに保管されているアイテムはすべて著作権により保護されています。
|
