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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/9523
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| タイトル: | Flash-lamp-crystallized Polycrystalline Silicon Films with Remarkably Long Minority Carrier Lifetimes |
| 著者: | Ohdaira, Keisuke
Takemoto, Hiroyuki
Nishikawa, Takuya
Matsumura, Hideki |
| キーワード: | Flash lamp annealing
crystallization
polycrystalline silicon
Hydrogen passivation
minority carrier lifetime |
| 発行日: | 2010 |
| 出版者: | Elsevier |
| 誌名: | Current Applied Physics |
| 巻: | 10 |
| 号: | 3 |
| 開始ページ: | S402 |
| 終了ページ: | S405 |
| DOI: | 10.1016/j.cap.2010.02.029 |
| 抄録: | Polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of precursor a-Si films are found to hardly lose hydrogen (H) atoms during crystallization and keep the initial H concentration on the order of 10^<21> /cm^3. Short annealing duration and sufficient Si film thickness would lead to the suppression of H desorption. A characteristic lateral crystallization mechanism, referred to as explosive crystallization (EC), may also contribute to prevent H desorption due to rapid lateral heat diffusion into neighboring a-Si. Poly-Si films after annealing under N2 or forming gas ambient shows remarkably long minority carrier lifetime compared to untreated films, indicating effective defect termination by H atoms remaining in the poly-Si films. |
| Rights: | NOTICE: This is the author's version of a work accepted for publication by Elsevier. Keisuke Ohdaira, Hiroyuki Takemoto, Takuya Nishikawa, and Hideki Matsumura, Current Applied Physics, 10(3), 2010, S402-S405, http://dx.doi.org/10.1016/j.cap.2010.02.029 |
| URI: | http://hdl.handle.net/10119/9523 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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| 15085-1.pdf | | 851Kb | Adobe PDF | 見る/開く |
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