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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/9523

Title: Flash-lamp-crystallized Polycrystalline Silicon Films with Remarkably Long Minority Carrier Lifetimes
Authors: Ohdaira, Keisuke
Takemoto, Hiroyuki
Nishikawa, Takuya
Matsumura, Hideki
Keywords: Flash lamp annealing
polycrystalline silicon
Hydrogen passivation
minority carrier lifetime
Issue Date: 2010
Publisher: Elsevier
Magazine name: Current Applied Physics
Volume: 10
Number: 3
Start page: S402
End page: S405
DOI: 10.1016/j.cap.2010.02.029
Abstract: Polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of precursor a-Si films are found to hardly lose hydrogen (H) atoms during crystallization and keep the initial H concentration on the order of 10^<21> /cm^3. Short annealing duration and sufficient Si film thickness would lead to the suppression of H desorption. A characteristic lateral crystallization mechanism, referred to as explosive crystallization (EC), may also contribute to prevent H desorption due to rapid lateral heat diffusion into neighboring a-Si. Poly-Si films after annealing under N2 or forming gas ambient shows remarkably long minority carrier lifetime compared to untreated films, indicating effective defect termination by H atoms remaining in the poly-Si films.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. Keisuke Ohdaira, Hiroyuki Takemoto, Takuya Nishikawa, and Hideki Matsumura, Current Applied Physics, 10(3), 2010, S402-S405, http://dx.doi.org/10.1016/j.cap.2010.02.029
URI: http://hdl.handle.net/10119/9523
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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