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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/9832

Title: Advantage of Plasma-Less Deposition in Cat-CVD to the Performance of Electronic Devices
Authors: Matsumura, Hideki
Hasegawa, Tomoaki
Nishizaki, Shogo
Ohdaira, Keisuke
Keywords: Cat-CVD
Thin Film Transistor (TFT)
Amorphous Silicon
Silicon Nitride (SiNx)
Issue Date: 2011
Publisher: Elsevier
Magazine name: Thin Solid Films
Volume: 519
Number: 14
Start page: 4568
End page: 4570
DOI: 10.1016/j.tsf.2011.01.302
Abstract: Advantage of plasma-less deposition in catalytic chemical vapor deposition (Cat-CVD) is demonstrated in performance of amorphous-silicon (a-Si) thin-film transistors (TFTs), by comparing with a-Si TFTs fabricated by plasma-enhanced CVD (PECVD). Cat-CVD a-Si TFTs show 2 or 3 orders of magnitude lower off-current than PECVD ones. Exposure of Cat-CVD TFTs to an argon or a hydrogen plasma severely increases their off-current, while the off-current recovers by chemically etching the plasma-damaged surface layer. It is concluded that PECVD damages the a-Si surface to a depth of several tens of nm, whereas Cat-CVD induces no serious damage to the film surface and therefore induces no deterioration of electrical properties.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. Hideki Matsumura, Tomoaki Hasegawa, Shogo Nishizaki and Keisuke Ohdaira, Thin Solid Films, 519(14), 2011, 4568-4570, http://dx.doi.org/10.1016/j.tsf.2011.01.302
URI: http://hdl.handle.net/10119/9832
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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