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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/9833

Title: Flash-Lamp-Crystallized Polycrystalline Silicon Films with High Hydrogen Concentration Formed from Cat-CVD a-Si Films
Authors: Ohdaira, Keisuke
Tomura, Naohito
Ishii, Shohei
Matsumura, Hideki
Keywords: Crystallization
Flash lamp annealing
Polycrystalline silicon
Solar cell
Catalytic CVD
Issue Date: 2011
Publisher: Elsevier
Magazine name: Thin Solid Films
Volume: 519
Number: 14
Start page: 4459
End page: 4461
DOI: 10.1016/j.tsf.2011.01.313
Abstract: We investigate residual forms of hydrogen (H) atoms such as bonding configuration in poly-crystalline silicon (poly-Si) films formed by the flash-lamp-induced crystallization of catalytic chemical vapor deposited (Cat-CVD) a-Si films. Raman spectroscopy reveals that at least part of H atoms in flash-lampcrystallized (FLC) poly-Si films form Si-H_2 bonds as well as Si-H bonds with Si atoms even using Si-H-rich Cat-CVD a-Si films, which indicates the rearrangement of H atoms during crystallization. The peak desorption temperature during thermal desorption spectroscopy (TDS) is as high as 900 °C, similar to the reported value for bulk poly-Si.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. Keisuke Ohdaira, Naohito Tomura, Shohei Ishii and Hideki Matsumura, Thin Solid Films, 519(14), 2011, 4459-4461, http://dx.doi.org/10.1016/j.tsf.2011.01.313
URI: http://hdl.handle.net/10119/9833
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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