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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/9864

Title: Microstructure of Polycrystalline Silicon Films Formed through Explosive Crystallization Induced by Flash Lamp Annealing
Authors: Ohdaira, Keisuke
Ishii, Shohei
Tomura, Naohito
Matsumura, Hideki
Keywords: Flash lamp annealing
Crystallization
Polycrystalline silicon
Issue Date: 2011
Publisher: The Japan Society of Applied Physics
Magazine name: Japanese Journal of Applied Physics
Volume: 50
Start page: 04DP01-1
End page: 04DP01-3
DOI: 10.1143/JJAP.50.04DP01
Abstract: We perform transmission electron microscopy investigation of the microstructures of poly-Si films formed through explosive crystallization induced by flash lamp annealing of precursor amorphous silicon (a-Si) films. Two characteristic regions, formed periodically as a result of EC, show different microstructures: one consists of randomly oriented, densely packed fine grains of approximately 10 nm in size, whereas the other has relatively large (>100 nm), stretched grains, probably formed through liquid-phase epitaxy onto solid-phase-nucleated grains. Little a-Si tissue surrounding grains can be observed in the lattice images of flash-lamp-crystallized poly-Si films, which would be favorable for the rapid transport of photo-carriers.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2011 The Japan Society of Applied Physics. Keisuke Ohdaira, Shohei Ishii, Naohito Tomura, and Hideki Matsumura, Japanese Journal of Applied Physics, 50, 2011, 04DP01-1-04DP01-3. http://jjap.jsap.jp/link?JJAP/50/04DP01/
URI: http://hdl.handle.net/10119/9864
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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