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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/9864
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| タイトル: | Microstructure of Polycrystalline Silicon Films Formed through Explosive Crystallization Induced by Flash Lamp Annealing |
| 著者: | Ohdaira, Keisuke
Ishii, Shohei
Tomura, Naohito
Matsumura, Hideki |
| キーワード: | Flash lamp annealing
Crystallization
Polycrystalline silicon |
| 発行日: | 2011 |
| 出版者: | The Japan Society of Applied Physics |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 50 |
| 開始ページ: | 04DP01-1 |
| 終了ページ: | 04DP01-3 |
| DOI: | 10.1143/JJAP.50.04DP01 |
| 抄録: | We perform transmission electron microscopy investigation of the microstructures of poly-Si films formed through explosive crystallization induced by flash lamp annealing of precursor amorphous silicon (a-Si) films. Two characteristic regions, formed periodically as a result of EC, show different microstructures: one consists of randomly oriented, densely packed fine grains of approximately 10 nm in size, whereas the other has relatively large (>100 nm), stretched grains, probably formed through liquid-phase epitaxy onto solid-phase-nucleated grains. Little a-Si tissue surrounding grains can be observed in the lattice images of flash-lamp-crystallized poly-Si films, which would be favorable for the rapid transport of photo-carriers. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2011 The Japan Society of Applied Physics. Keisuke Ohdaira, Shohei Ishii, Naohito Tomura, and Hideki Matsumura, Japanese Journal of Applied Physics, 50, 2011, 04DP01-1-04DP01-3. http://jjap.jsap.jp/link?JJAP/50/04DP01/ |
| URI: | http://hdl.handle.net/10119/9864 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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| 16350-1.pdf | | 875Kb | Adobe PDF | 見る/開く |
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