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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/9884

Title: Extremely low surface recombination velocities on crystalline silicon wafers realized by catalytic chemical vapor deposited SiNx/a-Si stacked passivation layers
Authors: Koyama, Koichi
Ohdaira, Keisuke
Matsumura, Hideki
Issue Date: 2010-08-26
Publisher: AMERICAN INSTITUTE OF PHYSICS
Magazine name: Applied Physics Letters
Volume: 97
Number: 8
Start page: 082108-1
End page: 082108-3
DOI: 10.1063/1.3483853
Abstract: Catalytic chemical vapor deposition (Cat-CVD), also called hot-wire CVD, yields silicon-nitride/amorphous-silicon (SiNx/a-Si) stacked layers with remarkably low surface recombination velocities (SRVs) of lower than 1.5 cm/s for n-type crystalline Si (c-Si) wafers, and lower than 9.0 cm/s for p-type wafers. The temperature throughout the formation of stacked layers is lower than 250 °C. The usage of a-Si films significantly enhances the effective carrier lifetime of c-Si wafers, and SiNx films are also essential for reducing SRVs to such low levels.
Rights: Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Koichi Koyama, Keisuke Ohdaira, and Hideki Matsumura, Applied Physics Letters, 97(8), 082108 (2010) and may be found at http://link.aip.org/link/doi/10.1063/1.3483853
URI: http://hdl.handle.net/10119/9884
Material Type: publisher
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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