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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/9885
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| タイトル: | Variation of Crystallization Mechanisms in Flash-Lamp-Irradiated Amorphous Silicon Films |
| 著者: | Ohdaira, Keisuke
Nishikawa, Takuya
Matsumura, Hideki |
| キーワード: | A1. Growth models
A1. Recrystallization
B2. Semiconducting silicon
B3. Solar cells
A1. Surface structure
A1. Nucleation |
| 発行日: | 2010-06-25 |
| 出版者: | Elsevier |
| 誌名: | Journal of Crystal Growth |
| 巻: | 312 |
| 号: | 19 |
| 開始ページ: | 2834 |
| 終了ページ: | 2839 |
| DOI: | 10.1016/j.jcrysgro.2010.06.023 |
| 抄録: | Flashlamp annealing (FLA) can form polycrystalline silicon (poly-Si) films with various microstructures depending on the thickness of precursor amorphous Si (a-Si) films due to the variation of crystallizationmechanisms. Intermittent explosive crystallization (EC) takes place in precursor a-Si films thicker than approximately 2 μm, and the periodicity of microstructure formed resulting from the intermittent EC is independent of the thickness of a-Si films if their thickness is 2 μm or greater. In addition to the intermittent EC, continuous EC and homogeneous solid-phase crystallization (SPC) also occur in thinner films. These crystallizationmechanisms are governed by the ignition of EC at Si film edges and the homogeneous heating of interior a-Si. The results obtained in this study could be applied to control the microstructures of flash-lamp-crystallized poly-Si films. |
| Rights: | NOTICE: This is the author's version of a work accepted for publication by Elsevier. Keisuke Ohdaira, Takuya Nishikawa, and Hideki Matsumura, Journal of Crystal Growth, 312(19), 2010, 2834-2839, http://dx.doi.org/10.1016/j.jcrysgro.2010.06.023 |
| URI: | http://hdl.handle.net/10119/9885 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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