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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/9885

Title: Variation of Crystallization Mechanisms in Flash-Lamp-Irradiated Amorphous Silicon Films
Authors: Ohdaira, Keisuke
Nishikawa, Takuya
Matsumura, Hideki
Keywords: A1. Growth models
A1. Recrystallization
B2. Semiconducting silicon
B3. Solar cells
A1. Surface structure
A1. Nucleation
Issue Date: 2010-06-25
Publisher: Elsevier
Magazine name: Journal of Crystal Growth
Volume: 312
Number: 19
Start page: 2834
End page: 2839
DOI: 10.1016/j.jcrysgro.2010.06.023
Abstract: Flashlamp annealing (FLA) can form polycrystalline silicon (poly-Si) films with various microstructures depending on the thickness of precursor amorphous Si (a-Si) films due to the variation of crystallizationmechanisms. Intermittent explosive crystallization (EC) takes place in precursor a-Si films thicker than approximately 2 μm, and the periodicity of microstructure formed resulting from the intermittent EC is independent of the thickness of a-Si films if their thickness is 2 μm or greater. In addition to the intermittent EC, continuous EC and homogeneous solid-phase crystallization (SPC) also occur in thinner films. These crystallizationmechanisms are governed by the ignition of EC at Si film edges and the homogeneous heating of interior a-Si. The results obtained in this study could be applied to control the microstructures of flash-lamp-crystallized poly-Si films.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. Keisuke Ohdaira, Takuya Nishikawa, and Hideki Matsumura, Journal of Crystal Growth, 312(19), 2010, 2834-2839, http://dx.doi.org/10.1016/j.jcrysgro.2010.06.023
URI: http://hdl.handle.net/10119/9885
Material Type: author
Appears in Collections:c10-1. 雑誌掲載論文 (Journal Articles)

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