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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/10603

Title: Selective area molecular beam epitaxy of InAs on GaAs (110) masked substrates for direct fabrication of planar nanowire field-effect transistors
Authors: Akabori, Masashi
Murakami, Tatsuya
Yamada, Syoji
Keywords: InAs nanowires
nanowire field-effect transistors
MBE
Issue Date: 2012-02-10
Publisher: Elsevier
Magazine name: Journal of Crystal Growth
Volume: 345
Number: 1
Start page: 22
End page: 26
DOI: 10.1016/j.jcrysgro.2012.02.009
Abstract: We have synthesized InAs nanowires (NWs) by selective area molecular beam epitaxy (SA-MBE) on GaAs masked substrates. In particular, we have obtained in-plane-oriented NWs on the (110) plane, and then directly applied the NWs to planar nanowire field-effect transistors (NWFETs) by using conventional electron beam lithography without a NW dispersion process. We have measured output and transfer characteristics of the NWFETs at room temperature, and obtained a current swing but no turning off, and a field-effect mobility peak of 150 cm^2/V-s. We have also observed almost no temperature influence on field-effect mobility between 2 K and 300 K, suggesting a high-dense surface accumulation layer even at low temperatures.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. Masashi Akabori, Tatsuya Murakami, Syoji Yamada, Journal of Crystal Growth, 345(1), 2012, 22-26, http://dx.doi.org/10.1016/j.jcrysgro.2012.02.009
URI: http://hdl.handle.net/10119/10603
Material Type: author
Appears in Collections:f10-1. 雑誌掲載論文 (Journal Articles)

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