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http://hdl.handle.net/10119/10603
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| Title: | Selective area molecular beam epitaxy of InAs on GaAs (110) masked substrates for direct fabrication of planar nanowire field-effect transistors |
| Authors: | Akabori, Masashi
Murakami, Tatsuya
Yamada, Syoji |
| Keywords: | InAs nanowires
nanowire field-effect transistors
MBE |
| Issue Date: | 2012-02-10 |
| Publisher: | Elsevier |
| Magazine name: | Journal of Crystal Growth |
| Volume: | 345 |
| Number: | 1 |
| Start page: | 22 |
| End page: | 26 |
| DOI: | 10.1016/j.jcrysgro.2012.02.009 |
| Abstract: | We have synthesized InAs nanowires (NWs) by selective area molecular beam epitaxy (SA-MBE) on GaAs masked substrates. In particular, we have obtained in-plane-oriented NWs on the (110) plane, and then directly applied the NWs to planar nanowire field-effect transistors (NWFETs) by using conventional electron beam lithography without a NW dispersion process. We have measured output and transfer characteristics of the NWFETs at room temperature, and obtained a current swing but no turning off, and a field-effect mobility peak of 150 cm^2/V-s. We have also observed almost no temperature influence on field-effect mobility between 2 K and 300 K, suggesting a high-dense surface accumulation layer even at low temperatures. |
| Rights: | NOTICE: This is the author's version of a work accepted for publication by Elsevier. Masashi Akabori, Tatsuya Murakami, Syoji Yamada, Journal of Crystal Growth, 345(1), 2012, 22-26, http://dx.doi.org/10.1016/j.jcrysgro.2012.02.009 |
| URI: | http://hdl.handle.net/10119/10603 |
| Material Type: | author |
| Appears in Collections: | g10-1. 雑誌掲載論文 (Journal Articles)
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