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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/10675

Title: Passivation characteristics of SiNx/a-Si and SiNx/Si-rich-SiNx stacked layers on crystalline silicon
Authors: Thi, Trinh Cham
Koyama, Koichi
Ohdaira, Keisuke
Matsumura, Hideki
Keywords: Si-rich silicon nitride
amorphous silicon
solar cell efficiency
Issue Date: 2012-02-06
Publisher: Elsevier
Magazine name: Solar Energy Materials and Solar Cells
Volume: 100
Start page: 169
End page: 173
DOI: 10.1016/j.solmat.2012.01.010
Abstract: High-quality surface passivation is essential for obtaining crystalline silicon (c-Si) solar cells with high energy-conversion efficiency. Silicon-nitride (SiNx)/amorphous-silicon (a-Si) stacked layers prepared by catalytic chemical vapor deposition (Cat-CVD), also referred to as hot-wire CVD, demonstrate excellent performance as surface passivation layers for c-Si and realize a dramatically low surface recombination velocity (SRV). However, the use of a more transparent material than a-Si is required because the a-Si layer absorbs sunlight. Here, Si-rich SiNx films, as a more transparent material, with various atomic ratios of silicon/nitrogen (Si/N) are investigated as a replacement for a-Si films. The use of SiNx/Si-rich-SiNx stacked layers as passivation films on c-Si wafers results in a SRV as low as 5 cm/s and 30% improvement of the transparency at the wavelength of 400 nm compared to that of the SiNx/a-Si stacked layers. Moreover, after the annealing process, the passivation characteristics of the stacked layer were significantly improved, with a SRV as low as 3 cm/s.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. Trinh Cham Thi, Koichi Koyama, Keisuke Ohdaira, and Hideki Matsumura, Solar Energy Materials and Solar Cells, 100, 2012, 169-173, http://dx.doi.org/10.1016/j.solmat.2012.01.010
URI: http://hdl.handle.net/10119/10675
Material Type: author
Appears in Collections:z8-10-1. 雑誌掲載論文 (Journal Articles)

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