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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/10675
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| タイトル: | Passivation characteristics of SiNx/a-Si and SiNx/Si-rich-SiNx stacked layers on crystalline silicon |
| 著者: | Thi, Trinh Cham
Koyama, Koichi
Ohdaira, Keisuke
Matsumura, Hideki |
| キーワード: | Si-rich silicon nitride
amorphous silicon
solar cell efficiency
Cat-CVD
passivation |
| 発行日: | 2012-02-06 |
| 出版者: | Elsevier |
| 誌名: | Solar Energy Materials and Solar Cells |
| 巻: | 100 |
| 開始ページ: | 169 |
| 終了ページ: | 173 |
| DOI: | 10.1016/j.solmat.2012.01.010 |
| 抄録: | High-quality surface passivation is essential for obtaining crystalline silicon (c-Si) solar cells with high energy-conversion efficiency. Silicon-nitride (SiNx)/amorphous-silicon (a-Si) stacked layers prepared by catalytic chemical vapor deposition (Cat-CVD), also referred to as hot-wire CVD, demonstrate excellent performance as surface passivation layers for c-Si and realize a dramatically low surface recombination velocity (SRV). However, the use of a more transparent material than a-Si is required because the a-Si layer absorbs sunlight. Here, Si-rich SiNx films, as a more transparent material, with various atomic ratios of silicon/nitrogen (Si/N) are investigated as a replacement for a-Si films. The use of SiNx/Si-rich-SiNx stacked layers as passivation films on c-Si wafers results in a SRV as low as 5 cm/s and 30% improvement of the transparency at the wavelength of 400 nm compared to that of the SiNx/a-Si stacked layers. Moreover, after the annealing process, the passivation characteristics of the stacked layer were significantly improved, with a SRV as low as 3 cm/s. |
| Rights: | NOTICE: This is the author's version of a work accepted for publication by Elsevier. Trinh Cham Thi, Koichi Koyama, Keisuke Ohdaira, and Hideki Matsumura, Solar Energy Materials and Solar Cells, 100, 2012, 169-173, http://dx.doi.org/10.1016/j.solmat.2012.01.010 |
| URI: | http://hdl.handle.net/10119/10675 |
| 資料タイプ: | author |
| 出現コレクション: | z8-10-1. 雑誌掲載論文 (Journal Articles)
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