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このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/10676

タイトル: Polycrystalline Silicon Films with Nanometer-Sized Dense Fine Grains Formed by Flash-Lamp-Induced Crystallization
著者: Ohdaira, Keisuke
Ishii, Shohei
Tomura, Naohito
Matsumura, Hideki
キーワード: flash lamp annealing
crystallization
polycrystalline silicon
thin-film solar cell
nanometer-sized grains
発行日: 2012-01-01
出版者: American Scientific Publishers
誌名: Journal of Nanoscience and Nanotechnology
巻: 12
号: 1
開始ページ: 591
終了ページ: 595
DOI: 10.1166/jnn.2012.5342
抄録: Flash lamp annealing (FLA) with millisecond-order pulse duration can crystallize μm-order-thick a-Si films on glass substrates through explosive crystallization (EC), and flash-lamp-crystallized (FLC) poly-Si films consist of densely-packed nanometer-sized fine grains. We investigate the impact of the hydrogen concentration and the defect density of precursor a-Si films on crystallization mechanism and the microstructures of FLC poly-Si films, by comparing chemical-vapor-deposited (CVD) and sputtered precursor a-Si films. Transmission electron microscopy (TEM) observation reveals that FLC poly-Si films with similar periodic microstructures are formed by the FLA of the two kinds of precursor films, meaning no significant influence of hydrogen atoms and defect density on crystallization mechanism. This high flexibility of the properties of precursor a-Si films would contribute to a wide process window to reproducibly form FLC poly-Si films with the particular periodic microstructures.
Rights: This is the author's version of the work. It is posted here by permission of American Scientific Publishers. Copyright (C) 2012 American Scientific Publishers. Keisuke Ohdaira, Shohei Ishii, Naohito Tomura, and Hideki Matsumura, Journal of Nanoscience and Nanotechnology, 12(1), 2012, 591-595. http://dx.doi.org/10.1166/jnn.2012.5342
URI: http://hdl.handle.net/10119/10676
資料タイプ: author
出現コレクション:z8-10-1. 雑誌掲載論文 (Journal Articles)

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