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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/10880
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| タイトル: | Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization |
| 著者: | Ohdaira, Keisuke
Sawada, Keisuke
Usami, Noritaka
Varlamov, Sergey
Matsumura, Hideki |
| キーワード: | flash lamp annealing
explosive crystallization
polycrystalline silicon
amorphous silicon
solar cell |
| 発行日: | 2012-10-22 |
| 出版者: | The Japan Society of Applied Physics |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 51 |
| 号: | 10 |
| 開始ページ: | 10NB15-1 |
| 終了ページ: | 10NB15-4 |
| DOI: | 10.1143/JJAP.51.10NB15 |
| 抄録: | The flash lamp annealing (FLA) of electron-beam- (EB-) evaporated amorphous silicon (a-Si) films results in the formation of polycrystalline Si (poly-Si) films with at least a few μm long grains stretching along lateral crystallization directions. Unlike the case of using chemical-vapor-deposited (CVD) hydrogenated a-Si films as precursors, no peeling of Si films occurs even in the absence of Cr adhesion layers. Such a flash-lamp-induced crystallization occurs also in doped EB-evaporated a-Si films as in the case of undoped films. The p＾+/p^-/n^+ stacked structure is sufficiently kept even after crystallization, although the profiles of dopants are slightly modified. This fact clearly indicates that the crystallization observed is not based on liquid-phase epitaxy (LPE) after the complete melting of the whole a-Si precursor during millisecond-order treatment but through LPE-based explosive crystallization (EC), self-catalytic lateral crystallization driven by the release of latent heat. The formation of poly-Si films with large grains and the sufficient preservation of dopant profiles would lead to the utilization of the poly-Si films formed for solar cell devices. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2012 The Japan Society of Applied Physics. Keisuke Ohdaira, Keisuke Sawada, Noritaka Usami, Sergey Varlamov, and Hideki Matsumura, Japanese Journal of Applied Physics, 51(10), 2012, 10NB15-1-10NB15-4. http://jjap.jsap.jp/link?JJAP/51/10NB15/ |
| URI: | http://hdl.handle.net/10119/10880 |
| 資料タイプ: | author |
| 出現コレクション: | z8-10-1. 雑誌掲載論文 (Journal Articles)
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