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このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/10881

タイトル: Flash-lamp-induced explosive crystallization of amorphous germanium films leaving behind periodic microstructures
著者: Ohdaira, Keisuke
Matsumura, Hideki
キーワード: flash lamp annealing
explosive crystallization
polycrystalline germanium
periodic structure
発行日: 2012-10-23
出版者: Elsevier
誌名: Thin Solid Films
巻: 524
開始ページ: 161
終了ページ: 165
DOI: 10.1016/j.tsf.2012.10.023
抄録: Flash lamp annealing (FLA) can induce the explosive crystallization (EC) of micrometer-order-thick amorphous germanium (a-Ge) films. This EC leaves behind periodic microstructures consisting of two regions with different grain features existing alternatively along a lateral crystallization direction. One of the two regions contains a few hundred nm-sized relatively large grains, while such large-sized grains are not seen in the other region. This particular microstructure is similar to that of polycrystalline silicon (poly-Si) films formed through EC induced by FLA. The interval of the periodic structures in the polycrystalline Ge (poly-Ge) of 0.7–0.85 μm is smaller than that in the case of Si of about 1 μm. This is probably due to larger thermal diffusivity of a-Ge than that of a-Si. The speed of the EC is estimated to be 5–7 m/s, which is smaller than the speed of liquid-phase-epitaxy- (LPE-) based EC of ~ 8 m/s for Ge films reported previously. This fact indicates that a crystallization process other than LPE is also involved in this EC, and solid-phase nucleation governs the EC. This is also similar to what have been previously confirmed in Si films, meaning that this particular EC could occur universally in a variety of materials.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. Keisuke Ohdaira, Hideki Matsumura, Thin Solid Films, 524, 2012, 161-165, http://dx.doi.org/10.1016/j.tsf.2012.10.023
URI: http://hdl.handle.net/10119/10881
資料タイプ: author
出現コレクション:z8-10-1. 雑誌掲載論文 (Journal Articles)

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