|
JAIST Repository >
グリーンデバイス研究センター 2011～2016 >
z8-10. 学術雑誌論文等 >
z8-10-1. 雑誌掲載論文 >
このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/10882
|
| タイトル: | Liquid-phase explosive crystallization of electron-beam-evaporated a-Si films induced by flash lamp annealing |
| 著者: | Ohdaira, Keisuke
Matsumura, Hideki |
| キーワード: | Liquid phase epitaxy
Recrystallization
Semiconducting silicon
Solar cells
X-ray diffraction |
| 発行日: | 2011-11-25 |
| 出版者: | Elsevier |
| 誌名: | Journal of Crystal Growth |
| 巻: | 362 |
| 開始ページ: | 149 |
| 終了ページ: | 152 |
| DOI: | 10.1016/j.jcrysgro.2011.11.028 |
| 抄録: | We succeed in the formation of micrometer-order-thick polycrystalline silicon (poly-Si) films through the flash-lamp-induced liquid-phase explosive crystallization (EC) of precursor a-Si films prepared by electron-beam (EB) evaporation. The velocity of the explosive crystallization (v_<EC>) is estimated to be ∼14 m/s, which is close to the velocity of the liquid-phase epitaxy (LPE) of Si at a temperature around the melting point of a-Si of 1418 K. Poly-Si films formed have micrometer-order-long grains stretched along a lateral crystallization direction, and X-ray diffraction (XRD) and electron diffraction pattern measurements reveal that grains in poly-Si films tend to have a particular orientation. These features are significantly different from our previous results: the formation of poly-Si films containing randomly-oriented 10-nm-sized fine grains formed from a-Si films prepared by catalytic chemical vapor deposition (Cat-CVD) or sputtering. One possible reason for the emergence of a different EC mode in EB-evaporated a-Si films is the suppression of solid-phase nucleation (SPN) during Flash Lamp Annealing (FLA) due to tensile stress which precursor a-Si films originally hold. Poly-Si films formed from EB-evaporated a-Si films would contribute to the realization of high-efficiency thin-film poly-Si solar cells because of large and oriented grains. |
| Rights: | NOTICE: This is the author's version of a work accepted for publication by Elsevier. Keisuke Ohdaira, Hideki Matsumura, Journal of Crystal Growth, 362, 2011, 149-152, http://dx.doi.org/10.1016/j.jcrysgro.2011.11.028 |
| URI: | http://hdl.handle.net/10119/10882 |
| 資料タイプ: | author |
| 出現コレクション: | z8-10-1. 雑誌掲載論文 (Journal Articles)
|
このアイテムのファイル:
| ファイル |
記述 |
サイズ | 形式 |
|---|
| 17648.pdf | | 1847Kb | Adobe PDF | 見る/開く |
|
当システムに保管されているアイテムはすべて著作権により保護されています。
|
