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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/11393
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| タイトル: | Defect Termination of Flash-Lamp-Crystallized Large-Grain Polycrystalline Silicon Films by High-Pressure Water Vapor Annealing |
| 著者: | Ohdaira, Keisuke |
| キーワード: | Flash lamp annealing
High pressure water vapor annealing
Polycrystalline silicon
Crystallization |
| 発行日: | 2013-04-22 |
| 出版者: | The Japan Society of Applied Physics |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 52 |
| 号: | 4 |
| 開始ページ: | 04CR11-1 |
| 終了ページ: | 04CR11-4 |
| DOI: | 10.7567/JJAP.52.04CR11 |
| 抄録: | High-pressure water-vapor annealing (HPWVA) is performed on 3-µm-thick polycrystalline silicon (poly-Si) films formed on glass substrates by crystallizing electron-beam (EB)-evaporated precursor amorphous Si (a-Si) films by flash lamp annealing (FLA). HPWVA at higher temperature and pressure tends to result in a lower defect density of FLC poly-Si films. The defect density of FLC poly-Si films can be reduced from ～3×10~<17> to ～2×10^<16>/cm^3 when the HPWVA temperature is 500 °C and the pressure is more than 8 Mpa, which is sufficiently of device grade. The annealing of flash-lamp-crystallized (FLC) poly-Si films under inert-gas atmosphere does not lead to sufficient reduction in their defect density, indicating the necessity of water vapor during annealing. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2013 The Japan Society of Applied Physics. Keisuke Ohdaira, Japanese Journal of Applied Physics, 52(4), 2013, 04CR11. http://jjap.jsap.jp/link?JJAP/52/04CR11/ |
| URI: | http://hdl.handle.net/10119/11393 |
| 資料タイプ: | author |
| 出現コレクション: | z8-10-1. 雑誌掲載論文 (Journal Articles)
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| 19199.pdf | | 507Kb | Adobe PDF | 見る/開く |
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