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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/12137

Title: Effect of Annealing and Hydrogen Radical Treatment on the Structure of Solution-Processed Hydrogenated Amorphous Silicon Films
Authors: Sakuma, Yoo
Ohdaira, Keisuke
Masuda, Takashi
Takagishi, Hideyuki
Shen, Zhongrong
Shimoda, Tatsuya
Keywords: amorphous silicon
Solution process
Stress
Raman
Issue Date: 2014-02-14
Publisher: IOP Publishing
Magazine name: Japanese Journal of Applied Physics
Volume: 53
Number: 4S
Start page: 04ER07-1
End page: 04ER07-5
DOI: 10.7567/JJAP.53.04ER07
Abstract: We investigate the structure distribution of solution-processed (Sol. P) hydrogenated amorphous silicon (a-Si:H) films along a thickness direction and the effect of hydrogen-radical treatment (H-treatment) by Raman spectroscopy. Sol. P a-Si:H films have a stress distribution along the thickness direction, and the degree of the distribution depends on annealing temperature and duration. H-treatment affects stress and short-range order (SRO) of a-Si:H films. These results give us a suggestion about the formation mechanism of Sol. P a-Si:H films through network reconstruction and H-treatment.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2014 The Japan Society of Applied Physics. Yoo Sakuma, Keisuke Ohdaira, Takashi Masuda, Hideyuki Takagishi, Zhongrong Shen and Tatsuya Shimoda, Japanese Journal of Applied Physics, 53(4S), 2014, 04ER07-1-04ER07-5. http://dx.doi.org/10.7567/JJAP.53.04ER07
URI: http://hdl.handle.net/10119/12137
Material Type: author
Appears in Collections:z8-10-1. 雑誌掲載論文 (Journal Articles)

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