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http://hdl.handle.net/10119/12140
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| タイトル: | Passivation quality of a stoichiometric SiN_x single passivation layer on crystalline silicon prepared by catalytic chemical vapor deposition and successive annealing |
| 著者: | Thi, Trinh Cham
Koyama, Koichi
Ohdaira, Keisuke
Matsumura, Hideki |
| キーワード: | Passivation
Solar Cell
Cat-CVD
Silicon nitride |
| 発行日: | 2014-01-22 |
| 出版者: | IOP Publishing |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 53 |
| 号: | 2 |
| 開始ページ: | 022301-1 |
| 終了ページ: | 022301-6 |
| DOI: | 10.7567/JJAP.53.022301 |
| 抄録: | A silicon nitride (SiN_x) single passivation layer, prepared by catalytic chemical vapor deposition (Cat-CVD) and successive annealing, shows high passivation quality on crystalline silicon (c-Si) wafers. Effective minority carrier lifetime (τ_<eff>) monotonically increases with increase in deposition substrate temperature (T_s) for samples passivated by as-deposited SiN_x films, while more significant increase in τ_<eff> by annealing tends to be seen for the samples with SiN_x films deposited at lower T_s. The τ_<eff> obtained for the sample deposited at T_s of 100℃ and pressure (P) of 10 Pa, after annealing at 350℃ for 30 min in N_2, is about 3.0 ms, corresponding to a surface recombination velocity (SRV) of 5.0 cm/s. According to measured H content and fixed charge density (Q_f) in the SiN_x films, Q_f partly contributes to the passivation quality of the films particularly before annealing, while H content plays an important role on improving passivation quality of the films after annealing. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2014 The Japan Society of Applied Physics. Trinh Cham Thi, Koichi Koyama, Keisuke Ohdaira and Hideki Matsumura, Japanese Journal of Applied Physics, 53(2), 2014, 022301-1-022301-6. http://dx.doi.org/10.7567/JJAP.53.022301 |
| URI: | http://hdl.handle.net/10119/12140 |
| 資料タイプ: | author |
| 出現コレクション: | z8-10-1. 雑誌掲載論文 (Journal Articles)
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