JAIST Repository >
Green Devices Research Center 2011-2016 >
Articles >
Journal Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/12862

Title: Improvement in passivation quality and open-circuit voltage in silicon heterojunction solar cells by the catalytic doping of phosphorus atoms
Authors: Tsuzaki, Shogo
Ohdaira, Keisuke
Oikawa, Takafumi
Koyama, Koichi
Matsumura, Hideki
Issue Date: 2015-06-10
Publisher: IOP Publishing
Magazine name: Japanese Journal of Applied Physics
Volume: 54
Number: 7
Start page: 072301-1
End page: 072301-5
DOI: 10.7567/JJAP.54.072301
Abstract: We apply phosphorus (P) doping to amorphous silicon (a-Si)/crystalline silicon (c-Si) heterojunction solar cells realized by exposing c-Si to P-related radicals generated by the catalytic cracking of PH_3 molecules (Cat-doping). An ultrathin n^+-layer formed by P Cat-doping acts to improve the effective minority carrier lifetime (τ_<eff>) and implied open-circuit voltage (implied V_<oc>) owing to its field effect by which minority holes are sent back from an a-Si/c-Si interface. An a-Si/c-Si heterojunction solar cell with a P Cat-doped layer shows better solar cell performance, particularly in V_<oc>, than the cell without P Cat-doping. This result demonstrates the feasibility of applying Cat-doping to a-Si/c-Si heterojunction solar cells, owing to the advantage of the low-temperature (<200 °C) process of Cat-doping.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2015 The Japan Society of Applied Physics. Shogo Tsuzaki, Keisuke Ohdaira, Takafumi Oikawa, Koichi Koyama, and Hideki Matsumura, Japanese Journal of Applied Physics, 54(7), 2015, 072301. http://dx.doi.org/10.7567/JJAP.54.072301
URI: http://hdl.handle.net/10119/12862
Material Type: publisher
Appears in Collections:z8-10-1. 雑誌掲載論文 (Journal Articles)

Files in This Item:

File Description SizeFormat
21483.pdf756KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.


Contact : Library Information Section, Japan Advanced Institute of Science and Technology