|
JAIST Repository >
グリーンデバイス研究センター 2011～2016 >
z8-10. 学術雑誌論文等 >
z8-10-1. 雑誌掲載論文 >
このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/12862
|
| タイトル: | Improvement in passivation quality and open-circuit voltage in silicon heterojunction solar cells by the catalytic doping of phosphorus atoms |
| 著者: | Tsuzaki, Shogo
Ohdaira, Keisuke
Oikawa, Takafumi
Koyama, Koichi
Matsumura, Hideki |
| 発行日: | 2015-06-10 |
| 出版者: | IOP Publishing |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 54 |
| 号: | 7 |
| 開始ページ: | 072301-1 |
| 終了ページ: | 072301-5 |
| DOI: | 10.7567/JJAP.54.072301 |
| 抄録: | We apply phosphorus (P) doping to amorphous silicon (a-Si)/crystalline silicon (c-Si) heterojunction solar cells realized by exposing c-Si to P-related radicals generated by the catalytic cracking of PH_3 molecules (Cat-doping). An ultrathin n^+-layer formed by P Cat-doping acts to improve the effective minority carrier lifetime (τ_<eff>) and implied open-circuit voltage (implied V_<oc>) owing to its field effect by which minority holes are sent back from an a-Si/c-Si interface. An a-Si/c-Si heterojunction solar cell with a P Cat-doped layer shows better solar cell performance, particularly in V_<oc>, than the cell without P Cat-doping. This result demonstrates the feasibility of applying Cat-doping to a-Si/c-Si heterojunction solar cells, owing to the advantage of the low-temperature (<200 °C) process of Cat-doping. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2015 The Japan Society of Applied Physics. Shogo Tsuzaki, Keisuke Ohdaira, Takafumi Oikawa, Koichi Koyama, and Hideki Matsumura, Japanese Journal of Applied Physics, 54(7), 2015, 072301. http://dx.doi.org/10.7567/JJAP.54.072301 |
| URI: | http://hdl.handle.net/10119/12862 |
| 資料タイプ: | publisher |
| 出現コレクション: | z8-10-1. 雑誌掲載論文 (Journal Articles)
|
このアイテムのファイル:
| ファイル |
記述 |
サイズ | 形式 |
|---|
| 21483.pdf | | 756Kb | Adobe PDF | 見る/開く |
|
当システムに保管されているアイテムはすべて著作権により保護されています。
|
