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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/12905

Title: Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiN_x films by introducing phosphorous catalytic-doped layer
Authors: Trinh, Cham Thi
Koyama, Koichi
Ohdaira, Keisuke
Matsumura, Hideki
Issue Date: 2014-07-28
Publisher: American Institute of Physics
Magazine name: Journal of Applied Physics
Volume: 116
Number: 4
Start page: 044510-1
End page: 044510-7
DOI: 10.1063/1.4891237
Abstract: We improve the passivation property of n-type crystalline silicon (c-Si) surface passivated with a catalytic chemical vapor deposited (Cat-CVD) Si nitride (SiN_x) film by inserting a phosphorous (P)-doped layer formed by exposing c-Si surface to P radicals generated by the catalytic cracking of PH_3 molecules (Cat-doping). An extremely low surface recombination velocity (SRV) of 2 cm/s can be achieved for 2.5 Ω cm n-type (100) floating-zone Si wafers passivated with SiN_x/P Cat-doped layers, both prepared in Cat-CVD systems. Compared with the case of only SiN_x passivated layers, SRV decreases from 5 cm/s to 2 cm/s. The decrease in SRV is the result of field effect created by activated P atoms (donors) in a shallow P Cat-doped layer. Annealing process plays an important role in improving the passivation quality of SiN_x films. The outstanding results obtained imply that SiN_x/P Cat-doped layers can be used as promising passivation layers in high-efficiency n-type c-Si solar cells.
Rights: Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Trinh Cham Thi, Koichi Koyama, Keisuke Ohdaira and Hideki Matsumura, Journal of Applied Physics, 116(4), 044510 (2014) and may be found at http://dx.doi.org/10.1063/1.4891237
URI: http://hdl.handle.net/10119/12905
Material Type: publisher
Appears in Collections:z8-10-1. 雑誌掲載論文 (Journal Articles)

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