JAIST Repository >
Green Devices Research Center 2011-2016 >
Articles >
Journal Articles >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/12906

Title: Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C
Authors: Matsumura, Hideki
Hayakawa, Taro
Ohta, Tatsunori
Nakashima, Yuki
Miyamoto, Motoharu
Trinh, Cham Thi
Koyama, Koichi
Ohdaira, Keisuke
Issue Date: 2014-09-16
Publisher: American Institute of Physics
Magazine name: Journal of Applied Physics
Volume: 116
Number: 11
Start page: 114502-1
End page: 114502-10
DOI: 10.1063/1.4895635
Abstract: Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH_3) or diborane (B_2H_6) with heated tungsten (W) catalyzer. This paper is to investigate systematically this novel doping method, “Cat-doping”, in detail. The electrical properties of P or B doped layers are studied by the Van der Pauw method based on the Hall effects measurement. The profiles of P or B atoms in c-Si are observed by secondary ion mass spectrometry mainly from back side of samples to eliminate knock-on effects. It is confirmed that the surface of p-type c-Si is converted to n-type by P Cat-doping at 80 °C, and similarly, that of n-type c-Si is to p-type by B Cat-doping. The doping depth is as shallow as 5 nm or less and the electrically activated doping concentration is 10^<18> to 10^<19> cm^<-3> for both P and B doping. It is also found that the surface potential of c-Si is controlled by the shallow Cat-doping and that the surface recombination velocity of minority carriers in c-Si can be enormously lowered by this potential control.
Rights: Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Hideki Matsumura, Taro Hayakawa, Tatsunori Ohta, Yuki Nakashima, Motoharu Miyamoto, Trinh Cham Thi, Koichi Koyama, and Keisuke Ohdaira, Journal of Applied Physics, 116(11), 114502 (2014) and may be found at http://dx.doi.org/10.1063/1.4895635
URI: http://hdl.handle.net/10119/12906
Material Type: publisher
Appears in Collections:z8-10-1. 雑誌掲載論文 (Journal Articles)

Files in This Item:

File Description SizeFormat
21037.pdf2256KbAdobe PDFView/Open

All items in DSpace are protected by copyright, with all rights reserved.

 


Contact : Library Information Section, Japan Advanced Institute of Science and Technology