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http://hdl.handle.net/10119/12906
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| タイトル: | Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C |
| 著者: | Matsumura, Hideki
Hayakawa, Taro
Ohta, Tatsunori
Nakashima, Yuki
Miyamoto, Motoharu
Trinh, Cham Thi
Koyama, Koichi
Ohdaira, Keisuke |
| 発行日: | 2014-09-16 |
| 出版者: | American Institute of Physics |
| 誌名: | Journal of Applied Physics |
| 巻: | 116 |
| 号: | 11 |
| 開始ページ: | 114502-1 |
| 終了ページ: | 114502-10 |
| DOI: | 10.1063/1.4895635 |
| 抄録: | Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH_3) or diborane (B_2H_6) with heated tungsten (W) catalyzer. This paper is to investigate systematically this novel doping method, “Cat-doping”, in detail. The electrical properties of P or B doped layers are studied by the Van der Pauw method based on the Hall effects measurement. The profiles of P or B atoms in c-Si are observed by secondary ion mass spectrometry mainly from back side of samples to eliminate knock-on effects. It is confirmed that the surface of p-type c-Si is converted to n-type by P Cat-doping at 80 °C, and similarly, that of n-type c-Si is to p-type by B Cat-doping. The doping depth is as shallow as 5 nm or less and the electrically activated doping concentration is 10^<18> to 10^<19> cm^<-3> for both P and B doping. It is also found that the surface potential of c-Si is controlled by the shallow Cat-doping and that the surface recombination velocity of minority carriers in c-Si can be enormously lowered by this potential control. |
| Rights: | Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Hideki Matsumura, Taro Hayakawa, Tatsunori Ohta, Yuki Nakashima, Motoharu Miyamoto, Trinh Cham Thi, Koichi Koyama, and Keisuke Ohdaira, Journal of Applied Physics, 116(11), 114502 (2014) and may be found at http://dx.doi.org/10.1063/1.4895635 |
| URI: | http://hdl.handle.net/10119/12906 |
| 資料タイプ: | publisher |
| 出現コレクション: | z8-10-1. 雑誌掲載論文 (Journal Articles)
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